FDD8770-VB

FDD8770 www.VBsemi.com N-Channel 20-V (D-S)175 _C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (
) ID (A)a 0.0045 @ VGS = 4.5 V 100 0.006 @ VGS = 2.5 V 90 VDS (V) 20 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252 G Drain Connected to Tab G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "15 TC = 25_C Continuous Drain Currenta TC = 100_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range Unit V 100 ID 80 IDM 200 IS 65 A 71 PD W 8.3b, c TJ, Tstg - 55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec. Maximum Junction-to-Ambientb Maximum Junction-to-Case Steady State RthJA RthJC Typical Maximum 15 18 40 50 1.75 2.1 Unit _C/W Notes a. Package Limited b. Surface Mounted on 1” x 1” FR4 Board c. t v 10 sec 服务热线：400-655-8788 1 FDD8770 www.VBsemi.com SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 A 20 VGS(th) VDS = VGS, ID = 250 A 0.5 IGSS VDS = 0 V, VGS = "12 V "100 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs VDS = 5 V, VGS = 4.5 V nA A 100 A VGS = 4.5 V, ID = 20 A 0.0045 VGS = 4.5 V, ID = 20 A, TJ = 125_C 0.0055 VGS = 2.5 V, ID = 20 A 0.006 VDS = 5 V, ID = 40 A V 1.5
20 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 375 Total Gate Chargec Qg 26 Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Qgs Fall Timec VGS = 0 V, VDS = 20 V, f = 1 MHz 730 35 nC 7 Rg 1 td(on) td(off) pF 5 VDS = 10 V,, VGS = 4.5 V,, ID = 40 A Qgd tr Timec 3660 VDD = 10 V, RL = 0.25
ID ^ 40 A, VGEN = 4.5 V, RG = 2.5
tf 3.7 20 35 120 190 45 70 20 35
ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM 100 A Voltageb VSD IF = 100 A, VGS = 0 V 1.2 1.5 V Source-Drain Reverse Recovery Time trr IF = 40 A, di/dt = 100 A/s 35 70 ns Diode Forward Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 s, duty cycle v 2%. c. Independent of operating temperature. 服务热线：400-655-8788 2 FDD8770 www.VBsemi.com TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 100 VGS = 4.5 thru 3 V 80 60 I D - Drain Current (A) I D - Drain Current (A) 80 2.5 V 40 2V 20 60 40 TC = 125_C 20 25_C 1V 0 0 2 4 6 8 0 0.0 10 0.5 VDS - Drain-to-Source Voltage (V) 1.0 - 55_C 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 120 0.012 TC = - 55_C r DS(on) - On-Resistance (
) g fs - Transconductance (S) 100 25_C 80 125_C 60 40 20 0 0.009 VGS = 4.5 V 0.006 VGS = 4.5 V 0.003 0.000 0 20 40 60 80 80 0 100 90 VGS - Gate-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) C - Capacitance (pF) Ciss 3000 2000 Coss Crss Gate Charge 12 4000 1000 120 ID - Drain Current (A) Capacitance 5000 110 100 0 VGS = 10 V ID = 40 A 9 6 3 0 0 4 8 12 16 VDS - Drain-to-Source Voltage (V) 服务热线：400-655-8788 20 0 10 20 30 40 50 60 70 Qg - Total Gate Charge (nC) 3 FDD8770 www.VBsemi.com TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 VGS = 4.5 V ID = 20 A 1.6 I S - Source Current (A) r DS(on) - On-Resistance (
) (Normalized) 2.0 1.2 0.8 0.4 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ = 150_C TJ = 25_C 10 1 175 0 0.3 TJ - Junction Temperature (_C) 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature Safe Operating Area 200 50 100 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 s Limited by rDS(on) 100 s 10 1 ms 10 ms 100 ms dc TC = 25_C Single Pulse 10 0 1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TC - Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 服务热线：400-655-8788 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 4 FDD8770 www.VBsemi.com TO-252AA CASE OUTLINE E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 L3 0.89 1.27 0.035 0.070 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 Note • Dimension L3 is for reference only. 服务热线：400-655-8788 5 FDD8770 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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