CMD4003

CMD4003/CMU4003 P-Channel 40-V (D-S) MOSFET General Description Product Summary The 4003 uses advanced trench BVDSS RDSON ID technology to provide excellent -40V 20mΩ -27A RDS(ON). The device well suited Applications for high current applications. DC/DC converters Inverter Features Power Supplies P-Channel MOSFET TO-252 / 251 Pin Configuration Fast Switching D Low ON-resistance 100% EAS Guaranteed G S RoHS Compliant TO-252 (CMD4003) D G D G S TO-251 (CMU4003) S Absolute Maximum Ratings Symbol Parameter Rating Units VDS VGS Drain-Source Voltage -40 V Gate-Source Voltage ±20 V Continuous Drain Current 1 -27 A ID@TC=100℃ Continuous Drain Current 1 -21 A IDM Pulsed Drain Current 2 -54 A ID@TC=25℃ 3 EAS Single Pulse Avalanche Energy 64 mJ IAS Avalanche Current -27 A 4 PD@TC=25℃ Total Power Dissipation 35 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-ambient 1 --- 62 ℃/ W RθJC Thermal Resistance Junction -Case1 --- 3.6 ℃/ W CA01P1 www.cmosfet.com Typ. Page 1 of 2 CMD4003/CMU4003 P-Channel 40-V (D-S) MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit V VGS=0V , ID=-250uA -40 --- --- VGS=-10V , ID=-8A --- 14 20 VGS=-4.5V , ID=-5A --- 18 28 VGS=VDS , ID =-250uA -1 --- -2.5 mΩ V VDS=-32V, VGS=0V , TJ=25℃ --- --- -1 VDS=-32V, VGS=0V , TJ=55 ℃ --- --- -5 Gate-Source Leakage Current VGS = ±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-10A --- 17 --- S VDS=0V , VGS=0V , f=1MHz --- 2 --- Ω --- 12 25 --- 3.4 --- Gate-Drain Charge --- 3.3 --- Turn-On Delay Time --- 24 --- IDSS Drain-Source Leakage Current IGSS Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Td(on) Tr Td(off) Tf VDS=-20V, VGS =-4.5V , ID=-1A Rise Time VDD=-20V, VGS=-10V, RG=3.3Ω --- 15 --- Turn-Off Delay Time ID=-1A --- 60 --- uA nC ns Fall Time --- 8 --- Ciss Input Capacitance --- 2400 --- Coss Output Capacitance --- 180 --- Crss Reverse Transfer Capacitance --- 105 --- Min. Typ. Max. Unit VDS=-15V, VGS=0V , f=1MHz pF Diode Characteristics Symbol Parameter Conditions 15 IS Continuous Source Current ISM Pulsed Source Current2 5 VSD VG=VD=0V , Force Current 2 Diode Forward Voltage VGS=0V , IS=-1.6A , TJ=25℃ --- --- -27 A --- --- -54 A --- --- -1.2 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-20V,VGS=-10V,L=0.5mH,IAS=-17A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA01P1 www.cmosfet.com Page 2 of 2