CMD40N15

CMD40N15/CMU40N15 150V N-Channel MOSFET General Description Product Summary The 40N15 uses advanced trench BVDSS technology and design to provide excellent RDSON 150V RDS(ON). This device is ideal for boost converters and synchronous rectifiers for ID 33m 40A Applications consumer, telecom, industrial power supplies LED controller and LED backlighting. Power Supplies DC-DC Converters Features TO252 / TO251 Pin Configuration N-channel - Enhancement mode D Low On-Resistance G 100% avalanche tested S RoHS Compliant TO-252 Absolute Maximum Ratings G D S TO-251 Type Package Marking CMD40N15 TO-252 CMD40N15 CMU40N15 TO-251 CMU40N15 Symbol Parameter Rating Units VDS Drain-Source Voltage 150 V VGS Gate-Sou ce Voltage 25 V ID@TC=25 Continuous Drain Current 40 A ID@TC=100 Continuous Drain Current 32 A IDM Pulsed Drain Current 120 A EAS Single Pulse Avalanche Energy 460 mJ W Total Power Dissipation 110 TSTG Storage Temperature Range -55 to 175 TJ Operating Junction Temperature Range -55 to 175 PD@TC=25 Thermal Data Symbol CA03K1 Parameter Typ. Max. Unit R JA Thermal Resistance Junction-ambient --- 50 /W R JC Thermal Resistance Junction -Case --- 1.1 /W www.cmosfet.com Page 1 of 2 CMD40N15/CMU40N15 150V N-Channel MOSFET Electrical Characteristics (TJ=25 Symbol BVDSS RDS(ON) , unless otherwise noted) Parameter Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage VGS=0V , ID=250uA 150 --- --- V Static Drain-Source On-Resistance VGS=10V , ID=15A --- --- 33 mΩ 3 --- 5 V Gate Threshold Voltage VDS= VGS, ID = 250μA IDSS Drain-Source Leakage Current VDS=150V , VGS=0V , TJ=25℃ --- --- 1 uA IGSS Gate-Source Leakage Current VGS --- --- 100 nA gfs Forward Transconductance VDS=10V, ID=15A --- 20 --- S VDS=0V , VGS=0V , f=1MHz --- 3.0 --- --- 38 --- --- 13 --- --- 8 --- VGS(th) Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Tr Td(off) Tf 25V , VDS=0V VDS=75V , VGS=10V, ID=20A Turn-On Delay Time nC --- 20 --- Rise Time VDD=30V, RL =30Ω --- 8 --- Turn-Off Delay Time IDS=1A , RG =6Ω VGEN = 10V --- 41 --- --- 17 --- --- 2500 --- VDS=30V , VGS=0V , f=1MHz --- 192 --- --- 42 --- Min. Typ. Max. Unit --- --- 40 A --- --- 120 A --- --- 1.2 V Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IS=28A , TJ=25℃ Note : This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA03K1 www.cmosfet.com Page 2 of 2