CMD100N68K

CMD100N68K/CMU100N68K 68V N-Channel MOSFET General Description Product Summary The 100N68K uses advanced technology BVDSS RDSON ID 68V 7mΩ 100A and design to provide excellent RDS(ON) . This device is ideal for boost converters Applications and synchronous rectifiers for consumer, telecom, industrial power supplies and Inverters LED backlighting. Power Supplies TO-252/251 Pin Configuration Features D Max rDS(on) =7mΩ at VGS = 10V G Fast Switching S RoHS Compliant TO-252 Absolute Maximum Ratings G D S TO-251 Type Package Marking CMD100N68K TO-252 CMD100N68K CMU100N68K TO-251 CMU100N68K Symbol Parameter Rating Units VDS Drain-Source Voltage 68 V VGS Gate-Source Voltage ±20 V 100 A 80 A 400 A 450 mJ Total Power Dissipation 170 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ ID@TC=25℃ ID@TC=100 IDM E AS PD@TC=25℃ Continuous Drain Current Pulsed Drain Current Drain-Source Avalanche Energy 1 Thermal Data Symbol CA04J2 Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambient --- 62.5 ℃/W RθJC Thermal Resistance Junction-case --- 1.4 ℃/W www.cmosfet.com Page 1 of 2 CMD100N68K/CMU100N68K 68V N-Channel MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol BVDSS RDS(ON) VGS(th) Parameter Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. Max. Unit V VGS=0V , ID=250uA 68 --- --- VGS=10V , ID=28A --- --- 7 VGS=6 V , ID=20A --- --- 13 mΩ Gate Threshold Voltage VGS=VDS , ID =250 uA 2 --- 4 V IDSS Drain-Source Leakage Current VDS=48V , VGS=0V --- --- 1 uA IGSS Gate-Source Leakage Current VGS =±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=10V, I D=20A --- 22 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 --- Ω --- Qg Total Gate Charge I D =30A --- 91 Qgs Gate-Source Charge V DS = 30V --- 10 --- Qgd Gate-Drain Charge VGS =10V --- 19 --- Turn-On Delay Time V DD=30V --- 10 --- Rise Time I D =30A --- 8 --- Turn-Off Delay Time R GEN =1.8Ω VGS =10V --- 41 --- --- 16 --- --- 5000 --- --- 287 --- --- 258 --- Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Ciss Fall Time Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V , VGS=0V , f=1MHz nC ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IS=28A --- --- 100 A --- --- 400 A --- --- 1.2 V Notes: 1.Starting TJ = 25℃, L=0.5mH, I AS =42.5A, V DD = 30V, VGS = 10 V . This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA04J2 www.cmosfet.com Page 2 of 2