CMB50N10

CMP50N10/CMB50N10/CMI50N10/CMF50N10 100V N-Channel MOSFET General Description Product Summary The 50N10 uses advanced process BVDSS RDSON ID 100V 17mΩ 50A technology and design to provide excellent RDS(ON).This device is Applications ideal for boost converters and DC-DC converters synchronous rectifiers for consumer, UPS telecom, industrial power supplies Power Supply PWM Motor Controls and LED backlighting. TO-220/263/262/220F Pin Configuration D Features Fast Switching G D 100% Avalanche tested G TO-263 (CMB50N10) TO-220 (CMP50N10) RoHS compliant S S G D G S TO-262 (CMI50N10) DS TO-220F (CMF50N10) Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±25 V ID@TC=25℃ Continuous Drain Current 50 A ID@TC=100℃ Continuous Drain Current 37 A 150 A 200 mJ IDM EAS Pulsed Drain Current 1 2 Single Pulse Avalanche Energy Units PD@TC=25℃ Total Power Dissipation 100 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol CA02M2 Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambient --- 62 ℃/W RθJC Thermal Resistance Junction-case --- 1.5 ℃/W www.cmosfet.com Page 1 of 2 CMP50N10/CMB50N10/CMI50N10/CMF50N10 100V N-Channel MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions Min. Typ. Max. Unit V VGS=0V , ID=250uA 100 --- --- VGS=10V , ID=25A --- 14 17 VGS=4.5V , ID=10A --- 18 25 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1 --- 3 Drain-Source Leakage Current VDS=100V , VGS =0V --- --- 1 IGSS Gate-Source Leakage Current VGS = ±25V ,VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=15V , ID=20A --- 15 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.3 --- Ω Qg Total Gate Charge I D = 20 A --- 50 --- Qgs Gate-Source Charge V DD = 80 V --- 10 --- Qgd Gate-Drain Charge VGS = 0 to 10V --- 8 --- Turn-On Delay Time V DD = 20 V --- 10 --- Rise Time ID = 5 0 A --- 5 --- Turn-Off Delay Time R G =3.5Ω V GS =10V --- 30 --- --- 5 --- --- 3600 --- IDSS Td(on) Tr Td(off) Tf Ciss Fall Time Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V , VGS=0V , f=1MHz mΩ V uA nC ns pF --- 730 --- --- 65 --- Min. Typ. Max. Unit --- --- 50 A --- --- 150 A --- --- 1.2 V Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IS=25A , TJ=25℃ Note : 1.Repetitive rating; pulse width limited by maximum junction temperature 2.The EAS data shows Max. rating . The test condition is VDD=50V , VGS=10V , L=0.5mH , IAS=28A This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA02M2 www.cmosfet.com Page 2 of 2