FH1607D

SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD FH1607D N-Channel Enhancement Mode MOSFET Features A pplicatio ns • • Switching application • Power Management for Inverter Systems. 68V/ 70A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Rel i ableand Rugged TO-252 D D FH1607 G D G ********** S S Schematic diagram Marking and pin assignment TO-252 Top View Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) V DSS Drain-Source Voltage 68 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C 70 A TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current T C =25°C V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient 280** T C=25°C 70 T C=100°C 60 T C=25°C 75 T C=100°C 37.5 2 110 A A W °C/W Avalanche Ratings EAS Avalanche Energy, Single Pulsed L=0.5mH 280*** mJ Note：* Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=55V www.xfhong.com 1/7 Ver1.0 FH1607D N-Channel Enhancement Mode MOSFET Electrical Characteristics (T C = 25°C Unless Otherwise Noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit 68 - - V Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS V GS=0V, I DS =250µA V DS=68V, VGS =0V TJ =85°C Gate Threshold Voltage V DS=VGS, I DS=250µA Gate Leakage Current V GS=± 25V, V DS=0V RDS(ON)* Drain-Source On-state Resistance - - 1 µA - - 10 2 3 4 V ±100 nA - - V GS=10V, IDS =35A - 6.8 8.5 mΩ ISD =35A, VGS=0V - 0.8 1 V Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Q rr Reverse Recovery Charge - ISD =35A, dlSD/dt=100A/ µs 33 - ns - 60 - nC Ω Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1.5 - Ciss Input Capacitance - 3200 - Coss Output Capacitance - 351 - C rss Reverse Transfer Capacitance VGS=0V, VDS =25V, Frequency=1.0MHz - 290 - t d(ON) Turn-on Delay Time - 14 - Tr Turn on Rise Time td(OFF) Turn-off Delay Time Tf - VDD= 34V, RG= 3 Ω, I DS=35A, VGS=10V, Turn-off Fall Time - 13 pF - - 20 - - 7 - - 84 - - 13 - - 27 - ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate- Source Charge Qgd Gate- Drain Charge VDS = 55V, VGS =10V, IDS=35A nC Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%. . www.xfhong.com 2/7 Ver1.0 FH1607D N-Channel Enhancement Mode MOSFET Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01Ω tAV Avalanche Test Circuit and Waveforms VDS RD V DS DUT RG 90% VGS VDD 10% VGS tp td(on) tr www.xfhong.com 3/7 td(off) tf Ver1.0 FH1607D N-Channel Enhancement Mode MOSFET Typical Operating Characteristics Power Dissipation Drain Current 175 ID - Drain Current (A) 90 Ptot - Power (W) 150 125 100 75 80 70 60 50 40 30 50 20 25 10 o 0 TC=25 C 0 o 20 40 60 0 80 100 120 140 160 180 200 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area 100 Rd s(o n) Lim it ID - Drain Current (A) 600 100us 10 1ms 10ms DC 1 o TC=25 C 0.1 0.01 0.1 1 10 100 500 VDS - Drain - Source Voltage (V) Thermal Transient Impedance Normalized Effective Transient 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Mounted on minimum pad o RθJA : 110 C/W 0.01 0.001 0.0001 Single 0.001 0.1 0.01 1 10 Square Wave Pulse Duration (sec) www.xfhong.com 4/7 Ver1.0 FH1607D N-Channel Enhancement Mode MOSFET Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 8.0 160 VGS= 6,7,8,9,10V 5.5V 120 ID - Drain Current (A) RDS(ON) - On - Resistance (mΩ) 140 100 80 60 5V 40 20 4.5V 7.5 VGS =10V 7.0 6.5 6.0 5.5 0 0 1.0 2.0 3.0 4.0 5.0 0 6.0 20 40 ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.6 Normalized Threshold Vlotage RDS(ON) - On - Resistance (mΩ) 15 13 11 9 7 5 6 7 8 9 VGS - Gate - Source Voltage (V) www.xfhong.com 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 100 IDS =250µA IDS=35A 4 80 VDS - Drain-Source Voltage (V) 17 5 60 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) 5/7 Ver1.0 FH1607D N-Channel Enhancement Mode MOSFET Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 170 2.4 VGS = 10V 2.2 100 IDS = 35A 1.8 IS - Source Current (A) Normalized On Resistance 2.0 1.6 1.4 1.2 1.0 0.8 o Tj=175 C 10 o Tj=25 C 1 0.6 0.4 o 0.2 -50 -25 RON@Tj=25 C: 6.8m Ω 0 25 50 0.1 0.0 75 100 125 150 175 0.8 1.0 1.2 Capacitance Gate Charge 1.4 10 5000 VDS= 55V 9 4000 VGS - Gate-source Voltage (V) 4500 C - Capacitance (pF) 0.6 VSD - Source-Drain Voltage (V) Frequency=1MHz Ciss 3500 3000 2500 2000 1500 1000 Coss IDS= 35A 8 7 6 5 4 3 2 1 500 0 Crss 5 10 15 20 25 30 35 0 40 VDS - Drain - Source Voltage (V) www.xfhong.com 0.4 Tj - Junction Temperature (°C) 5500 0 0.2 0 13 26 39 52 65 78 91 104 QG - Gate Charge (nC) 6/7 Ver1.0 FH1607D N-Channel Enhancement Mode MOSFET Package Information : TO-252 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 4.830 TYP. D2 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 1.700 0.055 2.900 TYP. L1 L2 1.400 L3 0.114 TYP. 0.067 0.063 TYP. 1.600 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V www.xfhong.com 5.350 TYP. 0.211 TYP. 7/7 Ver1.0