SWB046R68E8T

SW046R68E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ High ruggedness Low RDS(ON) (Typ 4.6mΩ)@VGS=10V Low Gate Charge (Typ 145nC) Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification, Li Battery Protect Board, Inverter TO-263 BVDSS : 68V ID : 145A RDS(ON) : 4.6mΩ 1 1 2 2 2 3 3 1 1. Gate 2.Drain 3.Source General Description 3 This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW P 046R68E8T SW046R68E8T TO-220 TUBE 2 SW B 046R68E8T SW046R68E8T TO-263 REEL Value TO-220 TO-263 Unit 68 V Continuous drain current (@TC=25oC) 145* A Continuous drain current (@TC=100oC) 97* A 580 A ± 20 V Absolute maximum ratings Symbol VDSS ID Parameter Drain to source voltage IDM Drain current pulsed VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 506 mJ EAR Repetitive avalanche energy (note 1) 50 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns Total power dissipation (@TC=25oC) 195.3 W Derating factor above 25oC 1.56 W/oC -55 ~ + 150 oC 300 oC PD TSTG, TJ TL (note 1) Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Rthjc Thermal resistance, Junction to case Rthja Thermal resistance, Junction to ambient Copyright@ Semipower Technology Co., Ltd. All rights reserved. Value Unit 0.64 oC/W 45 May.2022. Rev. 0.6 1/6 SW046R68E8T Electrical characteristic ( TJ = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA 68 ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current V V/oC 0.05 VDS=68V, VGS=0V 1 uA VDS=54V, TJ=125oC 50 uA Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V -100 nA 4 V 5.4 mΩ IGSS On characteristics VGS(TH) RDS(ON) Gfs Gate threshold voltage Drain to source on state resistance Forward transconductance VDS=VGS, ID=250uA 2 =25oC VGS=10V, ID=30A,TJ 4.6 VGS=10V, ID=30A,TJ=125oC 7.5 mΩ VDS=5V, ID=30A 64 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Rising time Turn off delay time 6554 VGS=0V, VDS=34V, f=1MHz 543 pF 386 31 VDS=34V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) 75 ns 131 Fall time 58 Qg Total gate charge 145 Gate-drain charge VDS=54V, VGS=10V, ID=30A , IG=5mA (note 4,5) Qgs Gate-source charge Qgd Rg Gate resistance VDS=0V, Scan F mode 3.2 30 nC 51 Ω Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=45A, VGS=0V trr Reverse recovery time Qrr Reverse recovery charge IS=30A, VGS=0V, dIF/dt=100A/us Min. Typ. Max. Unit 145 A 580 A 1.4 V 42 ns 64 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =0.5mH, IAS =45A, VDD=50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤30A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 2/6 SW046R68E8T Fig. 1. On-state characteristics Fig. 2. Transfer Characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On-state current vs. diode forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 3/6 SW046R68E8T Fig. 7. Gate charge characteristics Fig. 9. Maximum safe operating area(TO220&TO263) Fig. 8. Capacitance Characteristics Fig. 10. Maximum drain current vs. case temperature(TO220&TO263) Fig. 11. Transient thermal response curve(TO220&TO263) Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 4/6 SW046R68E8T Fig. 12. Gate charge test circuit & waveform Fig. 13. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD VIN 10VIN DUT 10% 10% td(on) tr tON td(off) tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 5/6 SW046R68E8T Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ Semipower Technology Co., Ltd.All rights reserved. May.2022. Rev. 0.6 6/6