KND3403C

KIA 80A 30V N-CHANNEL MOSFET KNX3403C SEMICONDUCTORS 1. Features KNX3403C is an N-channel enhancement mode power Mosfet field effect transistor which is produced using KIA’s LVMosfet technology.the improved process and cell structure have been especially tailored to minimize on-state resistance,provide superior switching performance. This device is widely used in UPS,Power Management for Inverter Systems. 2. Features      80A, 30V, RDS(on)( typ. )= 5.0mΩ@VGS = 10 V Low gate charge Low Crss Fast switching Improved dv/dt capability 3. Pin configuration 1 of 5 Pin Function 1 Gate 2 Drain 3 Source Rev 1.0 Dec.2020 KIA 80A 30V N-CHANNEL MOSFET KNX3403C SEMICONDUCTORS 4. Ordering Information Part Number Package Brand KND3403C TO-252 KIA 5. Absolute maximum ratings (TC= 25ºC , unless otherwise noted) Symbol VDSS Parameter Drain-Source Voltage ID Drain Current -Continuous (TC = 25 ºC) -Continuous (TC = 100 ºC) IDM VGSS EAS Drain Current -Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy PD Power Dissipation (TC = 25 ºC) -Derate above 25 ºC TJ,TSTG (Note 1) Operating and Storage Temperature Range Value 30 80 57 320 ±20 110.25 65 0.47 Units V A A A V mJ W W/ºC -55 to +150 ºC 6. Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 of 5 Value 0.52 62 Units ºC /W ºC /W Rev 1.0 Dec.2020 KIA 80A 30V N-CHANNEL MOSFET KNX3403C SEMICONDUCTORS 7. Electrical characteristics Symbol (TC= 25ºC , unless otherwise noted) Test Conditions Min Typ Max Parameter Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 uA 30 -- -- V IDSS Drain-Source Leakage Current VDS = 30 V, VGS = 0 V -- -- 1 uA IGSS Gate- Source Leakage Current VGS = ±20 V, VDS = 0 V -- -- ±100 nA VDS = VGS, ID = 250 uA 0.8 1.3 2.5 V VGS = 10 V, ID = 20 A -- 5.0 6.2 mΩ VGS = 4.5V, ID = 10 A -- 7.5 9.0 mΩ f = 1.0 MHz， VDS =0 V, VGS = 0 V, -- 1.5 -- Ω -- 2500 -- pF -- 1250 -- pF -- 1100 -- pF -- 7 -- ns -- 3.6 -- ns -- 36.8 -- ns -- 22.5 -- ns -- 38.9 -- nC -- 4.48 -- nC -- 10.78 -- nC -- -- 80 A -- -- 320 A -- -- 1.4 V -- 12.8 -- ns -- 3.3 -- nC On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance RG Gate Resistance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD =15 V,VGS=4.5V, ID =1 A, RG =3Ω (Note2.3) VDS=25V,ID=14A , VGS=10V(Note 2,3) Drain-Source Diode Characteristics and Maximum Ratings Integral Reverse P-N IS Continuous Source Current Junction Diode in the ISM Pulsed Source Current MOSFET VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS =20 A trr Qrr Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 20 A, dIF / dt = 100 A/us (Note 2) Notes: 1. L = 0.5mH, VDD = 25V, VGS = 10V,RG = 25Ω, Starting TJ = 25°C 2. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2% 3. Essentially independent of operating temperature 3 of 5 Rev 1.0 Dec.2020 KIA 80A 30V N-CHANNEL MOSFET KNX3403C SEMICONDUCTORS ID, Drain-Source Current (A) Normalized VGS(TH), Gate -Source Voltage 8. Typical Characteristics Tj - Junction Temperature (°C) Fig2. Normalized Threshold Voltage Vs. Temperature Tc- Case Temperature (°C) Fig3. Typical Transfer Characteristics Tj - Junction Temperature (°C) Fig4. Normalized Threshold Voltage Vs. Temperature -ID - Drain Current (A) ISD, Reverse Drain Current (A) Normalized RDS(ON) ID, Drain-Source Current (A) VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward 4 of 5 Rev 1.0 Dec.2020 KIA 80A 30V N-CHANNEL MOSFET KNX3403C C, Capacitance (pF) VGS, Gate-Source Voltage (V) SEMICONDUCTORS VDS, Drain-Source Voltage (V) Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg, Total Gate Charge (nC) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Fig9. Transient Thermal Response Curve Fig10. Switching Time Test Circuit and waveforms 5 of 5 Rev 1.0 Dec.2020