CMD100P03

CMD100P03/CMU100P03 P-Channel 30-V (D-S) MOSFET General Description Product Summary These P-Channel enhancement mode power BVDSS RDSON ID -30V 12.5mΩ -90A field effect transistors use advanced trench technology and design to provide excellent Applications RDS(ON) . This device is suitable for use as DC-DC Converters a load switch or in PWM applications. LCD Display inverter Power Management in Note book Features TO-252 / 251 Pin Configuration Fast switching speed D D Lower On-resistance G 100% EAS Guaranteed G S TO-252 Simple Drive Requirement G D S S TO-251 Type Package Marking CMD100P03 TO-252 CMD100P03 CMU100P03 TO-251 CMU100P03 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Sou ce Voltage ±20 V ID@TC=25℃ Continuous Drain Current -90 A IDM Pulsed Drain Current -270 A EAS Single Pulse Avalanche Energy 65 mJ PD@TC=25℃ Total Power Dissipation 65 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol CA03J1 Parameter Typ. Max. Unit RθJA Junction-to-Ambient --- 40 ℃/W RθJC Junction-to-Case (Drain) --- 3 ℃/W www.cmosfet.com Page 1 of 2 CMD100P03/CMU100P03 P-Channel 30-V (D-S) MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions Min. Typ. Max. Unit V VGS=0V , ID=-250uA -30 --- --- VGS=-10V, ID=-20A --- --- 12.5 VGS=-4.5V, ID=-15A --- --- 18 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1 --- -2.5 V IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V , TJ=25℃ --- --- -1 uA IGSS Gate-Source Leakage Current VGS = ±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V, ID=-10A --- 20 --- S Qg Total Gate Charge --- 46 --- Qgs Gate-Source Charge --- 8 --- Qgd Td(on) Tr Td(off) Tf Gate-Drain Charge VDS=-20V , ID=-14A VGS=0 to -10V Turn-On Delay Time --- 12 --- --- 20 --- Rise Time VDD=-20V, VGS=-10V, RG=6Ω --- 12 --- Turn-Off Delay Time ID=-1A --- 60 --- mΩ nC ns Fall Time --- 38 --- Ciss Input Capacitance --- 3000 --- Coss Output Capacitance --- 470 --- Crss Reverse Transfer Capacitance --- 250 --- Min. Typ. Max. Unit VDS=-20V, VGS=0V , f=1MHz pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IF =-20A --- --- -90 A --- --- -270 A --- --- -1.2 V Note : This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA03J1 www.cmosfet.com Page 2 of 2