CMD1402

CMD1402/CMU1402 20V N-Channel MOSFET General Description Product Summary The 1402 combines advanced trench MOSFET technology with a low resistance package to provide BVDSS RDSON ID 20V 5.5mΩ 50A Applications extremely low RDS(ON). This device Server is ideal for load switch and battery DC/DC converter protection applications. Motor drives TO-252/251 Pin Configuration Features D Simple Drive Requirement G Ultra-Low RDS(on) G S Green Device Available D S TO-252 Type Absolute Maximum Ratings TO-251 Package Marking CMD1402 TO-252 CMD1402 CMU1402 TO-251 CMU1402 Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID@TC=25℃ Continuous Drain Current 50 A ID@TC=100℃ Continuous Drain Current 19 A 150 A 72 mJ IDM EAS Pulsed Drain Current 1 Avalanche energy 4 PD@TC=25℃ Total Power Dissipation 55 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter RθJA RθJC CA02S2 Typ. Max. Unit Thermal Resistance Junction-ambient --- 110 ℃/ W Thermal Resistance Junction -Case --- 2.6 ℃/ W www.cmosfet.com Page 1 of 2 CMD1402/CMU1402 20V N-Channel MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol Parameter Conditions BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gfs Forward Transconductance 2 Qg Total Gate Charge (VGS=4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Tr Td(off) Tf Ciss Turn-On Delay Time Rise Time Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V VGS=4.5V, ID=15A --- --- 5.5 VGS=2.5V , ID=10A --- --- 9 VGS=VDS , ID =250uA 0.5 --- 1.2 VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 VGS =± 12V , VDS=0V --- --- ±100 nA VDS=10V, I D =20A --- 33 --- S --- 36 --- VDS=10V , VGS=10V , ID=20A --- 9 --- --- 12 --- --- 8 --- 3 3 Turn-Off Delay Time 3 Reverse Transfer Capacitance nC --- 85 --- --- 20 --- --- 25 --- --- 4000 --- --- 450 --- --- 210 --- Min. Typ. Max. Unit --- --- 1.2 V VDS=10V , VGS=0V , f=1MHz Crss uA I D ≌18A Input Capacitance Output Capacitance V VDS =10V , VGS=5V , RGS =3.3Ω Fall Time3 Coss mΩ ns pF Diode Characteristics Symbol VSD Parameter Diode Forward Voltage 2 Conditions VGS=0V , IS= 20A Note : 1.Pulse width limited by maximum junction temperature. 2.Pulse test : Pulse Width≤300 usec, Duty Cycle≤2％. 3.Independent of operating temperature. 4.The EAS data shows Max. rating . The test condition is VDD=15V,VGS=10V,L=0.5mH,ID=17A This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA02S2 www.cmosfet.com . Page 2 of 2