CMD2922A

CMD2922A/CMU2922A 100V N-Channel MOSFET General Description Product Summary The 2922A uses advanced technology BVDSS RDSON ID 100V 85mΩ 18A and design to provide excellent RDS(ON) . This device is ideal for boost converters Applications and synchronous rectifiers for consumer, telecom, industrial power supplies and Inverters LED backlighting. Power Supplies TO-252/251 Pin Configuration Features D D Max rDS(on) =85 mΩ at VGS = 10V ● G Fast Switching S TO-252 RoHS Compliant Absolute Maximum Ratings G ▲ G D S ● ● TO-251 S Type Package Marking CMD2922A TO-252 CMD2922A CMU2922A TO-251 CMU2922A Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V 18 A 12 A ID@TC=25℃ ID@TC=100℃ Continuous Drain Current IDM Pulsed Drain Current 54 A E AS Drain-Source Avalanche Energy 8 mJ PD@TC=25℃ Total Power Dissipation 75 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol CA03O1 Parameter Typ. Max. RθJA Thermal Resistance Junction-ambient --- 62 RθJC Thermal Resistance Junction-case --- 1.08 www.cmosfet.com Unit ℃/W ℃/W Page 1 of 2 CMD2922A/CMU2922A 100V N-Channel MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 100 --- --- V VGS=10V , ID=5A --- --- 85 VGS =4.5V , I D=3A --- --- 120 BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =250 uA 1 --- 3 V IDSS Drain-Source Leakage Current VDS=80V , VGS=0V --- --- 1 uA IGSS Gate-Source Leakage Current VGS =±20V , VDS=0V --- --- ±10 00 nA gfs Forward Transconductance VDS=5V, ID=10A --- 10 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.8 --- Ω --- Qg Total Gate Charge I D =12A --- 25 Qgs Gate-Source Charge V DD= 30V --- 2.3 --- Qgd Gate-Drain Charge VGS =10V --- 6.8 ----- Td(on) Tr Td(off) Tf mΩ nC V DD=50V --- 7 Rise Time I D =18A --- 31 --- Turn-Off Delay Time R GS=12Ω VGS =10V --- 51 --- --- 53 --- --- 280 --- --- 138 --- --- 20 --- Min. Typ. Max. Unit A Turn-On Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IS=10A --- --- 18 --- --- 54 A --- --- 1.2 V Notes: This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA03O1 www.cmosfet.com Page 2 of 2