SWB030R04VT

SW030R04VT N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 3.7mΩ)@VGS=4.5V (Typ 2.8mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 120nC) ⚫ Improved dv/dt Capability ⚫ 100% Avalanche Tested ⚫ Application:Power Supply,LED Boost TO-263 BVDSS : 40V ID : 130A RDS(ON) : 3.7mΩ@VGS=4.5V 2.8mΩ@VGS=10V 1 1 2 2 3 2 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW P 030R04VT SW030R04VT TO-220 TUBE 2 SW B 030R04VT SW030R04VT TO-263 TUBE Absolute maximum ratings Symbol VDSS ID Value Parameter TO-220 Drain to source voltage TO-263 Unit 40 V Continuous drain current (@TC=25oC) 130* A Continuous drain current (@TC=100oC) 86* A 520 A ± 20 V IDM Drain current pulsed VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 828 mJ EAR Repetitive avalanche energy (note 1) 49 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns Total power dissipation PD TSTG, TJ TL (note 1) (@TC=25oC) Derating factor above 25oC Operating junction temperature & storage temperature 134 121 W 1.07 0.97 W/oC -55 ~ + 150 oC 300 oC Value TO-220 TO-263 Unit Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Rthjc Thermal resistance, Junction to case Rthja Thermal resistance, Junction to ambient Copyright@ Semipower Technology Co., Ltd. All rights reserved. 0.93 1.03 52 May.2022. Rev. 6.0 oC/W oC/W 1/6 SW030R04VT Electrical characteristic ( TJ = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA 40 ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current V V/oC 0.02 VDS=40V, VGS=0V 1 uA VDS=32V, TJ=125oC 50 uA Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V -100 nA IGSS On characteristics VGS(TH) RDS(ON) Gfs Gate threshold voltage Drain to source on state resistance Forward transconductance VDS=VGS, ID=250uA 3 V VGS=4.5V, ID=65A,TJ=25oC 1 3.7 4.6 mΩ VGS=10V, ID=65A,TJ=25oC 2.8 3.5 mΩ =25oC 2.9 3.6 mΩ VGS=4.5V, ID=65A,TJ =125oC 6.1 mΩ VGS=10V, ID=65A,TJ=125oC 4.6 mΩ VDS=10V, ID=30A 140 S VGS=10V, ID=130A,TJ Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Rising time Turn off delay time 5850 VGS=0V, VDS=20V, f=1MHz 773 pF 687 19 VDS=20V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) 54 ns 98 Fall time 35 Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate resistance 120 VDS=32V, VGS=10V, ID=30A (note 4,5) 17 nC 35 VDS=0V, Scan F mode Ω 1.3 Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=30A, VGS=0V trr Reverse recovery time Qrr Reverse recovery charge IS=30A, VGS=0V, dIF/dt=100A/us Min. Typ. Max. Unit 130 A 520 A 1.4 V 29 ns 19 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =1.84mH, IAS =30A, VDD=30V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 30A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 6.0 2/6 SW030R04VT Fig. 1. On-state characteristics Fig. 2. Transfer characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On-state current vs. diode forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 6.0 3/6 SW030R04VT Fig. 7. Gate charge characteristics Fig. 8. Capacitance Characteristics Fig. 9. Maximum safe operating area(TO-220) Fig. 10. Maximum safe operating area(TO-263) Fig. 11. Transient thermal response curve(TO-220) Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 6.0 4/6 SW030R04VT Fig. 12. Transient thermal response curve(TO-263) Fig. 13. Gate charge test circuit & waveform Fig. 14. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD 10VIN DUT 10% 10% VIN td(on) tr td(off) tON Copyright@ Semipower Technology Co., Ltd. All rights reserved. tf tOFF May.2022. Rev. 6.0 5/6 SW030R04VT Fig. 15. Unclamped Inductive switching test circuit & waveform Fig. 16. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 6.0 6/6