SWD020R03VLT

SW020R03VLT N-channel Enhanced mode TO-252 MOSFET Features TO-252 ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 3.1mΩ)@VGS=4.5V (Typ 2.1mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 145nC) ⚫ Improved dv/dt Capability ⚫ 100% Avalanche Tested ⚫ Application:Synchronous Rectification, Li Battery Protect Board, Inverter BVDSS : 30V ID : 120A RDS(ON) : 3.1mΩ@VGS=4.5V 1 2 2.1mΩ@VGS=10V 3 2 1. Gate 2.Drain 3.Source 1 General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. 3 Order Codes Item Sales Type Marking Package Packaging 1 SW D 020R03VLT SW020R03VLT TO-252 REEL Value Unit 30 V Continuous drain current (@TC=25oC) 120* A Continuous drain current (@TC=100oC) 100* A 480 A ± 20 V Absolute maximum ratings Symbol VDSS Parameter Drain to source voltage ID IDM Drain current pulsed (note 1) VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 576 mJ EAR Repetitive avalanche energy (note 1) 57 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns Total power dissipation (@TC=25oC) 125 W Derating factor above 25oC 1.0 W/oC -55 ~ + 150 oC PD TSTG, TJ Operating junction temperature & storage temperature *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Value Unit Rthjc Thermal resistance, Junction to case 1.0 oC/W Rthja Thermal resistance, Junction to ambient 65 oC/W Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 1/6 SW020R03VLT Electrical characteristic ( TJ = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS ΔBVDSS / ΔTJ IDSS Drain to source breakdown voltage Breakdown voltage temperature coefficient VGS=0V, ID=250uA 30 ID=250uA, referenced to 25oC V V/oC 0.02 VDS=30V, VGS=0V 1 uA VDS=24V, TJ=125oC 50 uA Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V -100 nA 2.4 V Drain to source leakage current IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA 1.2 =25oC 3.1 5 mΩ =25oC 2.1 3 mΩ VGS=10V, ID=30A,TJ =125oC 3.3 mΩ VDS=5V, ID=30A 82 S VGS=4.5V, ID=30A,TJ RDS(ON) Gfs Drain to source on state resistance Forward transconductance VGS=10V, ID=30A,TJ Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Rising time Turn off delay time 6123 VGS=0V, VDS=15V, f=1MHz pF 988 704 17 VDS=15V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) 57 ns 166 Fall time 87 Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS=24V, VGS=10V, ID=30A , IG=10mA (note 4,5) 145 Rg Gate resistance VDS=0V, Scan F mode 21 nC 42 Ω 4 Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=45A, VGS=0V trr Reverse recovery time Qrr Reverse recovery charge IS=30A, VGS=0V, dIF/dt=100A/us Min. Typ. Max. Unit 120 A 480 A 1.4 V 27 ns 13 nC May.2022. Rev. 0.6 2/6 ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =0.5mH, IAS =48A, VDD=40V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤30A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ Semipower Technology Co., Ltd. All rights reserved. SW020R03VLT Fig. 1. On-state characteristics Fig. 2. Transfer Characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On-state current vs. diode forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 3/6 SW020R03VLT Fig. 7. Gate charge characteristics Fig. 9. Maximum safe operating area Fig. 8. Capacitance Characteristics Fig. 10. Maximum drain current vs. case temperature Fig. 11. Transient thermal response curve Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 4/6 SW020R03VLT Fig. 12. Gate charge test circuit & waveform Fig. 13. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD VIN 10VIN DUT 10% 10% td(on) tr tON td(off) tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 5/6 SW020R03VLT Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 6/6