CMD30N06AL

CMD30N06AL/CMU30N06AL 60V N-Channel MOSFET General Description Product Summary The 30N06AL combines advanced trench MOSFET technology with a low resistance BVDSS RDSON ID 60V 40mΩ 30A package to provide extremely low RDS(ON). This device is ideal for boost converters Applications and synchronous rectifiers for consumer, telecom, industrial power supplies and DC-DC & DC-AC Converters Motor Control, Audio Amplifiers LED backlighting. High Current, High Speed Switching Solenoid And Relay Drivers Features TO-252 / 251 Pin Configurat ion N-channel-Enhancement mode D Lower On-resistance 100% Avalanche Tested G G S RoHS Compliant D S TO-252 (CMD30N06AL) TO-251 (CMU30N06AL) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current 1 30 A 1 20 A 80 A ID@TC=100℃ IDM Continuous Drain Current Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 69 mJ PD@TC=25℃ Total Power Dissipation 40 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol CA01P1 Parameter RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction -Case1 www.cmosfet.com Typ. 1 Max. Unit --- 50 ℃/W --- 2.2 ℃/W Page 1 of 2 CMD30N06AL/CMU30N06AL 60V N-Channel MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Min. Typ. Max. Unit V VGS=0V , ID=250μA 60 --- --- VGS=10V , ID=15A --- --- 40 VGS=4.5V , ID=15A --- --- 50 VGS=VDS , ID =250μA 1 --- 3 VDS=60V , VGS=0V , TJ=25℃ --- --- 1 VDS=60V , VGS=0V , TJ=55℃ --- --- 10 VGS = ±20V , VDS=0V --- --- ±100 nA mΩ V uA gfs Forward Transconductance VDS=5V , ID=20A --- 34 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 4.7 --- Ω Qg Total Gate Charge --- 28 --- VDS=30V , VGS=10V , ID=20A Qgs Gate-Source Charge --- 7.9 --- Qgd Gate-Drain Charge --- 8.8 --- Turn-On Delay Time --- 10 --- Td(on) nC Rise Time VDD=30V , VG =10V , RG=4.7Ω --- 20 --- Turn-Off Delay Time ID=26A --- 27 --- Fall Time --- 14 --- Ciss Input Capacitance --- 1100 --- Coss Output Capacitance --- 180 --- Crss Reverse Transfer Capacitance --- 65 --- Min. Typ. Max. Unit --- --- 30 A --- --- 80 A --- --- 1.3 V Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS Parameter Conditions 1 Continuous Source Current 2 ISM Pulsed Source Current VSD Diode Forward Voltage 2 VG=VD=0V , Force Current VGS=0V , IS=30A ,TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%. 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=28A. This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA01P1 www.cmosfet.com Page 2 of 2