CMB5970

CMB5970 P-Channel Silicon MOSFET General Description Product Summary The CMB5970 uses advanced trench BVDSS RDSON ID -150V 85mΩ -30A technology and design to provide excellent RDS(ON) with low gate Applications charge. It can be used in a wide Inverters variety of applications. Motor drive DC / DC converter Features TO-263 Pin Configuration P-Channel D D Low ON-resistance. Fast Switching G G S 100% avalanche tested TO-263 S (CMB5970) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -150 V VGS Gate-Sou ce Voltage ±20 V ID@TC=25℃ Continuous Drain Current -30 A IDM Pulsed Drain Current -90 A IAS Avalanche Current -30 A PD@TC=25℃ Total Power Dissipation 200 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range 150 ℃ Thermal Data Symbol CA01P1 Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambient --- 62.5 ℃/ W RθJC Thermal Resistance Junction-case --- 2 ℃/ W www.cmosfet.com Page 1 of 2 CMB5970 P-Channel Silicon MOSFET Electrical Characteristics (TJ=25 ℃ , unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions Min. Typ. Max. Unit V VGS=0V , ID=-250uA -150 --- --- VGS=-10V, ID=-10A --- 75 85 VGS=-4.5V , ID=-8A --- 160 180 mΩ RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250 uA -1 --- -3 V IDSS Drain-Source Leakage Current VDS=-100V , VGS=0V --- --- -1 uA IGSS Gate-Source Leakage Current VGS = ±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS= -10V, ID= -10A --- --- 40 S Qg Total Gate Charge I D = -20A --- 65 --- Qgs Gate-Source Charge V DS = -80V --- 10 --- Qgd Gate-Drain Charge VGS = -10V --- 17 --- Turn-On Delay Time Td(on) Tr Td(off) Tf V DS = -50V --- 20 --- Rise Time I D = -10A --- 80 --- Turn-Off Delay Time R L =5.6Ω V GS =-10V --- 250 --- --- 90 --- Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS= -20V, VGS=0V , f=1MHz nC ns --- 6600 --- --- 300 --- --- 200 --- Min. Typ. Max. Unit --- 70 --- ns --- 230 --- nC --- --- -1.3 V pF Diode Characteristics Symbol Parameter Conditions trr Reverse Recovery Time Qrr Reverse Recovery Charge IS=-8A dI/dt=-100A/μs VSD Diode Forward Voltage VGS=0V , IS=-20A This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA01P1 www.cmosfet.com Page 2 of 2