CMB180N06

CMP180N06/CMB180N06 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The 180N06 uses advanced trench BVDSS RDSON ID 60V 4mΩ 180A technology and design to provide excellent RDS(ON) with low gate charge. Applications It can be used in a wide variety of Power switching application applications. Uninterruptible power supply Hard switched and high frequency circuits TO-220/263 Pin Configuration Features D Fast switching Low On-Resistance G 100% avalanche tested D G S S TO-263 TO-220 RoHS Compliant Type Absolute Maximum Ratings Package Marking CMP180N06 TO-220 CMP180N06 CMB180N06 TO-263 CMB180N06 Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current 180 A ID@TC=100℃ Continuous Drain Current 116 A 540 A 950 mJ IDM EAS Pulsed Drain Current 1 2 Single Pulse Avalanche Energy PD@TC=25℃ Total Power Dissipation 250 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol CA03R3 Typ. Max. Unit RθJA Thermal Resistance Junction-ambient Parameter --- 62.5 ℃/ W RθJC Thermal Resistance Junction-case --- 0.51 ℃/ W www.cmosfet.com Page 1 of 2 CMP180N06/CMB180N06 N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit --- V BVDSS RDS(ON) Drain-Source Breakdown Voltage VGS=0V , ID=250uA 60 --- Static Drain-Source On-Resistance VGS=10V , ID=25A --- --- 4 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 --- 4 V VDS=60V , VGS=0V --- VDS=48V , VGS=0V,TJ=125℃ --- IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS = ±20V , VDS=0V gfs Forward Transconductance VDS=10V , ID=30A Qg Total Gate Charge I D = 90A Qgs Gate-Source Charge Qgd Gate-Drain Charge Turn-On Delay Time Td(on) Tr Td(off) Tf Rise Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 100 --- --- ±100 nA --- 32 --- S --- 86 --- V DD = 48 V --- 22 --- VGS = 10 V --- 30 --- VGS = 10 V V DD = 30V --- 38 --- --- 23 --- --- 70 --- --- 23.5 --- --- 5800 --- --- 635 --- --- 345 --- Min. Typ. Max. Unit R G =6Ω Fall Time uA --- I D = 90A Turn-Off Delay Time 1 VDS=25V , VGS=0V , f=1MHz nC ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current 1 VSD Diode Forward Voltage t rr Q rr Conditions VG=VD=0V , Force Current VGS=0V , IS=30 A , TJ=25℃ Reverse Recovery Time VGS=0V , IS=90A dI F/dt =100A/µ Reverse Recovery Charge --- --- 180 A --- --- 540 A --- --- 1.2 V --- 36 --- ns --- 41 --- µC Note : 1.Repetitive rating; pulse width limited by max. junction temperature. 2.The test condition is VDD=30V , VGS=10V , L=1 mH , I AS=49A This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA03R3 www.cmosfet.com Page 2 of 2