SWD2N60DC

SW2N60DC N-channel Enhanced mode TO-252/TO-251 MOSFET Features TO-252 BVDSS :600V TO-251 ID ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 3.9Ω)@VGS=10V ⚫ Low Gate Charge (Typ9.5nC) ⚫ Improved dv/dt Capability ⚫ 100% Avalanche Tested ⚫Application:Charger,Adaptor,LED : 2A RDS(ON) : 3.9Ω 1 2 1 3 2 2 3 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW D 2N60DC SW2N60DC TO-252 REEL 2 SW I 2N60DC SW2N60DC TO-251 TUBE Absolute maximum ratings Symbol VDSS ID Value Parameter TO-252 Drain to source voltage TO-251 Unit 600 V Continuous drain current (@TC=25oC) 2* A Continuous drain current (@TC=100oC) 1.26* A 8 A ± 30 V IDM Drain current pulsed VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 80 mJ EAR Repetitive avalanche energy (note 1) 12 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns Total power dissipation (@TC=25oC) 78 W Derating factor above 25oC 0.6 W/oC -55 ~ + 150 oC 300 oC PD TSTG, TJ TL (note 1) Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Value Parameter TO-252 Rthjc Thermal resistance, Junction to case Rthja Thermal resistance, Junction to ambient Copyright@ Semipower Technology Co., Ltd. All rights reserved. Unit TO-251 oC/W 1.6 86.6 May. 2022. Rev. 4.0 oC/W 1/6 SW2N60DC Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current IGSS 600 V V/oC 0.5 VDS=600V, VGS=0V 1 uA VDS=480V, TC=125oC 50 uA Gate to source leakage current, forward VGS=30V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V -100 nA 4.5 V 4.5 Ω On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID = 1A 3.9 Forward transconductance VDS= 30V, ID= 1 A 1.6 Gfs 2.5 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Qg Rising time Turn off delay time 305 VGS=0V, VDS=25V, f=1MHz 45 pF 15 6.5 VDS=300V, ID=2A, VGS=10V, RG=25Ω (note 4,5) 20 ns 19 Fall time 21 Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate resistance 9.5 VDS=480V, VGS=10V, ID=2A (note 4,5) 2.5 nC 4 VDS=0V, Scan F mode Ω 4.3 Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=2A, VGS=0V trr Reverse recovery time Qrr Reverse recovery charge IS=2A, VGS=0V, dIF/dt=100A/us Min. Typ. Max. Unit 2 A 8 A 1.4 V 250 ns 1.1 uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 40mH, IAS = 2A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 2A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ Semipower Technology Co., Ltd. All rights reserved. May. 2022. Rev. 4.0 2/6 SW2N60DC Fig. 1. On-state characteristics Fig. 2. On-resistance variation vs. drain current and gate voltage Fig. 3. Gate charge characteristics Fig. 4. On state current vs. diode forward voltage Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 6. On resistance variation vs. junction temperature Copyright@ Semipower Technology Co., Ltd. All rights reserved. May. 2022. Rev. 4.0 3/6 SW2N60DC Fig. 8. Capacitance Characteristics Fig. 7. Maximum safe operating area (TO-252&TO-251) Fig. 9. Transient thermal response curve(TO-252&TO-251) Fig. 10. Gate charge test circuit & waveform VGS Same type as DUT QG 10V VDS VGS QGS QGD DUT 0.5mA Charge(nC) Copyright@ Semipower Technology Co., Ltd. All rights reserved. May. 2022. Rev. 4.0 4/6 SW2N60DC Fig. 11. Switching time test circuit & waveform VDS RL 90% VDS VDD VIN RGS 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig. 12. Unclamped Inductive switching test circuit & waveform Fig. 13. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period Copyright@ Semipower Technology Co., Ltd. All rights reserved. VF VDD Body diode forward voltage drop May. 2022. Rev. 4.0 5/6 SW2N60DC DISCLAIMER * All the data&curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ Semipower Technology Co., Ltd. All rights reserved. May. 2022. Rev. 4.0 6/6