SK120N03B

SK120N03B 30V N-Channel MOSFET General Features     Proprietary New Trench Technology RDS(ON),typ.=3.7mΩ@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode BVDSS RDS(ON),typ. ID 30V 3.7mΩ 120A Applications    High efficiency DC/DC Converters Motor Bridge Switch Oring FET/Load Switching G D S Ordering Information Part Number SK120N03B TO-252 Package TO-252 Package No to Scale Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter SK120N03B Unit VDSS Drain-to-Source Voltage[1] 30 VGSS ID IDM EAS Gate-to-Source Voltage Continuous Drain Current TC=25℃ Pulsed Drain Current at VGS=10V Single Pulse Avalanche Energy ±20 120 480 200 mJ 5.0 V/ns dv/dt Peak Diode Recovery dv/dt [3] TL TPAK Power Dissipation TC=25℃ Power Dissipation TA=25℃ Derating Factor above 25℃ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds TJ& TSTG Operating and Storage Temperature Range PD 120 0.8 0.031 300 260 V A W W/℃ ℃ -55 to 150 Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol Parameter SK120N03B RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Unit 1.25 ℃/W REV.08 1 of 7 75 SK120N03B Electrical Characteristics OFF Characteristics Symbol TJ =25℃ unless otherwise specified Parameter Min. Typ. Max. Unit BVDSS Drain-to-Source Breakdown Voltage 30 -- -- V VGS=0V, ID=250uA IDSS Drain-to-Source Leakage Current -- -- 1 uA VDS=30V, VGS=0V IGSS Gate-to-Source Leakage Current -- -- +100 -- -- -100 ON Characteristics Symbol RDS(ON) Static Drain-to-Source On-Resistance VGS(TH) Gate Threshold Voltage Dynamic Characteristics Parameter Min. Typ. Max. -- 3.7 4 Unit mΩ -- 3.9 6 1.0 1.7 3.0 Min. Typ. Max. Input Capacitance -- 3385 -- Crss Reverse Transfer Capacitance -- 338 -- Coss Output Capacitance -- 469 -- -- 81 -- Qg Total Gate Charge -- 43 -- Qgs Gate-to-Source Charge -- 12 -- Qgd Gate-to-Drain (Miller) Charge -- 20 -- Resistive Switching Characteristics Parameter Test Conditions VGS=10V, ID=20A VGS=4.5V, ID=20A V VDS=VGS, ID=250uA Unit Test Conditions pF VGS=0V, VDS=25V, f=1.0MHZ VGS=0 to 10V nC VDD=20V, ID=30A, VGS=0 to 4.5V Essentially independent of operating temperature Min. Typ. Max. td(ON) Turn-on Delay Time -- 16 -- trise Rise Time -- 12 -- td(OFF) Turn-Off Delay Time -- 89 -- tfall Fall Time -- 37 -- REV.08 VGS=-20V, VDS=0V Essentially independent of operating temperature Ciss Symbol VGS=+20V, VDS=0V TJ =25℃ unless otherwise specified Parameter Symbol nA Test Conditions 2 of 7 Unit Test Conditions ns VDD=20V, ID=30A, VGS= 10V RG=3.0Ω SK120N03B Source-Drain Body Diode Characteristics Symbol Parameter TJ=25℃ unless otherwise specified Min Typ. Max. ISD Continuous Source Current -- -- 120 ISM Pulsed Source Current -- -- 480 VSD trr Qrr Diode Forward Voltage Reverse recovery time Reverse recovery charge ---- -30 5 1.2 --- Note: [1] TJ=+25℃ to +150℃ . [2] Silicon limited current only. [3] Package limited current. [4] Repetitive rating; pulse width limited by maximum junction temperature. [5] Pulse width≤380µs; duty cycle≤2%. REV.08 3 of 7 Unit Test Conditions A Integral PN-diode in MOSFET V ns nC IS=30A, VGS=0V VGS=0V ,IF=30A, diF/dt=100A/μs SK120N03B Typical Characteristics REV.08 4 of 7 SK120N03B Typical Characteristics 7 ． REV.08 5 of 7 SK120N03B Test Circuits and Waveforms Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit Fig. 1.2 Peak Diode Recovery dv/dt Waveforms REV.08 6 of 7 SK120N03B Test Circuits and Waveforms (Cont.) REV.08 7 of 7