AP90T03GS-HF-VB

AP90T03GS-HF www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () a, e ID (A) 0.0038 at VGS = 10 V 98 0.0044 at VGS = 4.5 V 98 Qg (Typ) • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU 82 nC APPLICATIONS • OR-ing • Server • DC/DC D D2PAK (TO-263) I2PAK (TO-262) G G D S S VBL1303 VBNC1303 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TC = 70 °C TA = 25 °C 98e ID 28.8b, c Pulsed Drain Current IDM Avalanche Current Pulse IAS 36 EAS 64.8 Continuous Source-Drain Diode Current L = 0.1 mH TC = 25 °C TA = 25 °C 300 TC = 70 °C TA = 25 °C IS A 3.13b, c 250a 175 PD W 3.75b, c 2.63b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range V 90a, e TC = 25 °C Maximum Power Dissipation A 27b, c TA = 70 °C Single Pulse Avalanche Energy V 98a, e TC = 25 °C Continuous Drain Current (TJ = 175 °C) Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol b, d Typ. Max. t  10 sec RthJA 32 40 Steady State RthJC 0.5 0.6 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 sec. d. Maximum under steady state conditions is 90 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 90 A. 服务热线：400-655-8788 1 AP90T03GS-HF www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 35 mV/°C - 7.5 1.5 2.5 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS 5 V, VGS = 10 V 90 µA A VGS = 10 V, ID = 28.8 A 0.0024 0.0038 VGS = 4.5 V, ID = 27 A 0.0027 0.0044 VDS = 15 V, ID = 28.8 A 160  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 12065 VDS = 15 V, VGS = 0 V, f = 1 MHz td(off) pF 970 VDS = 15 V, VGS = 10 V, ID = 28.8 A 171 257 81.5 123 VDS = 15 V, VGS = 4.5 V, ID = 28.8 A 34 f = 1 MHz 1.4 2.1 18 27 VDD = 15 V, RL = 0.625  ID  24 A, VGEN = 10 V, Rg = 1  11 17 70 105 tf 10 15 td(on) 55 83 180 270 55 83 12 18 tr td(off) nC 29 td(on) tr 1725 VDD = 15 V, RL = 0.67  ID  22.5 A, VGEN = 4.5 V, Rg = 1  tf  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD TC = 25 °C 90 90 IS = 22 A 0.8 1.2 A V Body Diode Reverse Recovery Time trr 52 78 ns Body Diode Reverse Recovery Charge Qrr 70.2 105 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 27 25 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 AP90T03GS-HF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 90 VGS = 10 V thru 4 V 2.4 I D - Drain Current (A) I D - Drain Current (A) 75 60 45 30 1.8 1.2 TC = 25 °C 0.6 15 VGS = 2 V 0 0.0 TC = 125 °C VGS = 3 V TC = - 55 °C 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) 0 2.5 1 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 600 0.0050 TC = 25 °C 0.0045 R DS(on) – On-Resistance (Ω) G fs - Transconductance (S) 500 TC = 125 °C 400 300 TC = - 55 °C 200 VGS = 4.5 V 0.0040 0.0035 0.0030 0.0025 100 0 0.0020 0 10 20 30 40 50 60 70 80 90 ID - Drain Current (A) 0 30 45 60 ID - Drain Current (A) Transconductance RDS(on) vs. Drain Current 15 000 ID = 28.8 A V GS - Gate-to-Source Voltage (V) Ciss 9000 6000 Coss 3000 Crss 0 0 15 75 90 10 12 000 C - Capacitance (pF) VGS = 10 V VDS = 15 V 8 VDS = 24 V 6 4 2 0 6 12 18 24 VDS - Drain-to-Source Voltage (V) Capacitance 30 0 30 90 60 120 150 Qg - Total Gate Charge (nC) 180 Gate Charge 服务热线：400-655-8788 3 AP90T03GS-HF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 VGS = 10 V, ID = 28.8 A VGS = 4.5 V, ID = 27 A 10 1.4 I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 1.6 1.2 1.0 0.8 1 T J = 150 °C T J = 25 °C 0.1 0.01 0.6 - 50 0.001 - 25 0 25 50 75 100 125 150 0 175 0.2 0.4 0.6 0.8 1 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Forward Diode Voltage vs. Temperature 2.8 0.005 0.004 2.4 TA = 125 °C V GS(th) Variance (V) RDS(on) -On-Resistance (Ω) ID = 28.8 A 0.003 TA = 25 °C 0.002 ID = 250 µA 2.0 1.6 1.2 0.001 0.000 0 2 4 6 8 10 0.8 - 50 - 25 0 25 50 75 100 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) RDS(on) vs. VGS vs. Temperature Threshold Voltage 125 150 175 1000 *Limited by rDS (on) I D - Drain Current (A) 100 10 10 ms 100 ms 1 1s 10 s dc 0.1 0.01 TA = 25 °C Single Pulse 0.001 0.1 *VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient 服务热线：400-655-8788 4 AP90T03GS-HF www.VBsemi.com 300 300 250 250 Power Dissipation (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 150 Package Limited 100 50 200 150 100 50 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 175 *The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 AP90T03GS-HF www.VBsemi.com TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L2 B A1 L4 Detail “A” Rotated 90° CW scale 8:1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. 4 E1 Section B - B and C - C Scale: none View A - A INCHES MILLIMETERS MIN. MAX. MIN. MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 6.22 - 0.245 - b 0.51 0.99 0.020 0.039 E1 b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 2.54 BSC 0.100 BSC c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 0.25 BSC 4.78 5.28 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. 服务热线：400-655-8788 6 AP90T03GS-HF www.VBsemi.com RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 7 AP90T03GS-HF www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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