CMB18N20A

CMB18N20A 200V N-Channel MOSFET General Description Product Summary The CMB18N20A uses advanced trench technology and design to BVDSS RDSON ID 200V 150mΩ 18A provide excellent RDS(ON) with Applications low gate charge. It can be used UPS in a wide variety of applications. Inverter Lighting Features TO-263 Pin Configuration Simple Drive Requirement D Fast Switching Improve dv/dt capability G S TO-263 (CMB18N20A) Absolute Maximum Ratings Symbol Parameter Value Units VDS Drain-Source Voltage 200 V VGS Gate-Sou ce Voltage ±30 V ID@Tc=25℃ Continuous Drain Current 18 A ID@Tc=100℃ Continuous Drain Current 11 A 1 IDM Pulsed Drain Current 54 A EAS Single Pulse Avalanche Energy2 180 mJ PD@Tc=25℃ Total Power Dissipation 100 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol CA02L2 R R Value Unit JA Thermal Resistance Junction-ambient Parameter 62.5 ℃/W JC Thermal Resistance Junction-case 1.2 ℃/W www.cmosfet.com Page 1 of 3 CMB18N20A 200V N-Channel MOSFET Electrical Characteristics (TJ=25 Symbol , unless otherwise noted) Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 200 --- --- V RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=10A --- --- 150 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1 1.95 3 V VDS=200V , VGS =0V --- --- 10 --- --- 100 --- --- ±100 nA uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VDS=160V , VGS=0V , T C = 125℃ VGS ±30V , VDS=0V gfs Forward Transconductance VDS=20V , ID=10A --- 14 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.4 --- Ω Qg Total Gate Charge I D = 18 A --- 20 --- Qgs Gate-Source Charge V DD = 1 60 V --- 5 --- Qgd Gate-Drain Charge VGS = 10 V --- 9 --- --- 20 --- --- 55 --- --- 50 --- --- 45 --- --- 1380 --- --- 200 --- --- 30 --- Min. Typ. Max. Unit --- --- 18 A --- --- 54 A --- --- 1.2 V Td(on) Tr Td(off) Tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance V DD = 1 00 V ID = 1 8 A R G =25Ω VDS=25V , VGS=0V , f=1MHz nC ns pF Diode Characteristics Symbol IS Parameter Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IS=1 A , TJ=25℃ Note : 1.Repetitive rating; pulse width limited by maximum junction temperature 2.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=10 mH,IAS=6A This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA02L2 www.cmosfet.com Page 2 of 3 CMB18N20A 200V N-Channel MOSFET Package Dimensions TO-263 Package Outline Drawing DIM MILLIMETERS A a B b1 b2 H h h1 h2 h3 h4 L l l1 l2 l3 N R 9.8±0.2 7.4±0.4 4.5±0.2 1.3±0.05 2.4±0.2 15.5±0.3 1.54±0.2 10.5±0.2 9.2±0.1 1.54±0.2 2.7±0.2 2.4±0.2 1.3±0.1 0.8±0.1 1.3±0.1 0.5±0.1 2.54±0.1 0.5R±0.05 Unit :mm CA02L2 www.cmosfet.com Page 3 of 3