CMD100N03

CMD100N03/CMU100N03 30V N-Channel MOSFET General Description Product Summary The 100N03 uses advanced trench BVDSS RDSON ID 30V 3.5mΩ 100A technology to provide excellent RDS(ON) and low gate charge. This device is Applications suitable for use as a wide variety of Uninterruptible Power Supply applications. DC Motor Control Load Switch TO-252/251 Pin Configuration Features Simple Drive Requirement D Fast Switching G Low On-Resistance S TO-252 (CMD100N03) Absolute Maximum Ratings G D S TO-251 (CMU100N03) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V 20 V ID@TC=25 VGS Continuous Drain Current 100 A ID@TC=100 Continuous Drain Current 70 A 300 A IDM Gate-Sou ce Voltage Pulsed Drain Current 1 2 EAS Single Pulse Avalanche Energy 400 mJ PD Total Power Dissipation 100 W TSTG Storage Temperature Range -55 to 175 TJ Operating Junction Temperature Range 175 Thermal Data Symbol R CA01P1 JC Parameter Thermal Resistance Junction-case www.cmosfet.com Typ. Max. Unit --- 1.36 /W Page 1 of 2 CMD100N03/CMU100N03 30V N-Channel MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions Min. Typ. Max. Unit V VGS=0V , ID=250uA 30 --- --- VGS=10V , ID=20A --- --- 3.5 VGS=5V , ID=20A --- --- 6.0 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1 1.6 3 V IDSS Drain-Source Leakage Current VDS=24V , VGS=0V --- --- 1 uA IGSS Gate-Source Leakage Current VGS --- --- 100 nA gfs Forward Transconductance VDS=16V , ID=26A --- 45 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 --- Ω Qg Total Gate Charge I D = 30A --- 70 --- Qgs Gate-Source Charge V DD = 15 V --- 10 --- Qgd Gate-Drain Charge VGS = 10V --- 18 --- Turn-On Delay Time V DD = 1 5 V --- 20 --- Rise Time ID = 3 0 A --- 58 --- Turn-Off Delay Time R G =12Ω V GS=10V --- 120 --- --- 90 --- --- 5500 --- --- 950 --- --- 260 --- Min. Typ. Max. Unit --- --- 100 A --- --- 300 A --- --- 1.2 V Td(on) Tr Td(off) Tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 20V , VDS=0V VDS=15V , VGS=0V , f=1MHz mΩ nC ns pF Diode Characteristics Symbol IS Parameter Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IS=1 A , TJ=25℃ Note : 1.Repetitive rating; pulse width limited by maximum junction temperature 2.The test condition is V DD=15V,L=0.5mH,ID=40A This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA01P1 www.cmosfet.com Page 2 of 2