SWD7N65J

SW7N65J N-channel Enhanced mode TO-220SF/TO-252 MOSFET Features       TO-220SF BVDSS : 650V TO-252 ID High ruggedness Low RDS(ON) (Typ 0.6Ω)@VGS=10V Low Gate Charge (Typ 13nC) Improved dv/dt Capability 100% Avalanche Tested Application:LED , Charger, PC Power : 7A RDS(ON) : 0.6Ω 1 2 1 3 2 2 3 1. Gate 2. Drain 3. Source General Description 1 This power MOSFET is produced with advanced super junction technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. 3 Order Codes Item Sales Type Marking Package Packaging 1 SW MN 7N65J SW7N65J TO-220SF TUBE 2 SW D 7N65J SW7N65J TO-252 REEL Absolute maximum ratings Symbol VDSS ID Value Parameter TO 220SF TO-220SF Drain to source voltage TO 252 TO-252 Unit 650 V Continuous drain current (@TC=25oC) 7* A Continuous drain current (@TC=100oC) 4.4* A 21 A ±30 V IDM Drain current pulsed VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 180 mJ EAR Repetitive avalanche energy (note 1) 18 mJ dv/dt MOSFET dv/dt ruggedness (@VDS=0~400V) 30 V/ns dv/dt Peak diode recovery dv/dt 20 V/ns PD TSTG, TJ TL (note 1) (note 3) Total power dissipation (@TC=25oC) 32.1 113.6 W Derating factor above 25oC 0.26 0.9 W/oC Operating junction temperature & storage temperature -55 ~ + 150 oC 300 oC Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Value TO-220SF TO-252 1.1 Rthjc Thermal resistance, Junction to case 3.9 Rthja Thermal resistance, Junction to ambient 46 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Unit oC/W oC/W Jul. 2020. Rev. 1.0 1/6 SW7N65J Electrical characteristic ( TJ = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ∆BVDSS / ∆TJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current IGSS 650 V 0.81 V/oC VDS=650V 650V, VGS=0V 0V 1 uA VDS=520V, TJ=125oC 50 uA Gate to source leakage current, forward VGS=30V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V -100 nA 45 4.5 V 0.66 Ω On characteristics VGS(TH) Gate threshold voltage RDS(ON) Drain to source on state resistance Gfs Forward transconductance VDS=VGS, ID=250uA 25 2.5 VGS=10V, ID=3.5A,TJ=25oC 0.6 VGS=10V, ID=3.5A,TJ=125oC 1.4 Ω 6 S VDS=30V, ID=3.5A Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Rising time Turn off delay time 475 VGS=0V, =0V VDS=200V, =200V f=1MHz 15 pF 1.1 14 VDS=325V, ID=7A, RG=10Ω, VGS=10V (note 4,5) 25 ns 37 Fall time 26 Qg Total gate charge 13 Gate-drain charge VDS=520V, VGS=10V, ID=7A IG=3mA (note 4,5) Qgs Gate-source charge Qgd Rg Gate resistance VDS=0V, Scan F mode 30 3 nC 6 Ω Source to drain diode ratings characteristics Symbol Parameter IS Continuous source current ISM VSD Test conditions Min. Typ. Max. Unit 7 A Pulsed source current Integral reverse p-n Junction diode in the MOSFET 21 A Diode forward voltage drop. IS=7A, VGS=0V 1.4 V trr Reverse recovery time Qrr Reverse recovery charge IS=7A, VGS=0V, dIF/dt=100A/us 253 ns 2.1 uC ※. Notes ※ 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =40mH, IAS =3A, VDD=50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 7A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jul. 2020. Rev. 1.0 2/6 SW7N65J Fig. 1. On-state characteristics Fig. 2. Transfer Characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On-state current vs. diode forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jul. 2020. Rev. 1.0 3/6 SW7N65J Fig. 7. Gate charge characteristics Fig. 9. Maximum safe operating area(TO-220SF) Fig. 8. Capacitance Characteristics Fig. 10. Maximum safe operating area(TO-252) Fig. 11. Transient thermal response curve(TO-220SF) Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jul. 2020. Rev. 1.0 4/6 SW7N65J Fig. 12. Transient thermal response curve(TO-252) Fig. 13. Gate charge test circuit & waveform Fig. 14. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD VIN 10VIN DUT 10% 10% td(on) tr tON Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. td(off) tf tOFF Jul. 2020. Rev. 1.0 5/6 SW7N65J Fig. 15. Unclamped Inductive switching test circuit & waveform Fig. 16. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jul. 2020. Rev. 1.0 6/6