SWD7N65DA

SW7N65DA N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET Features ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ TO-262N TO-251N High ruggedness Low RDS(ON) (Typ 1.4Ω)@VGS=10V Low Gate Charge (Typ 25nC) Improved dv/dt Capability 100% Avalanche Tested Application: LED , Charger, PC Power TO-252 BVDSS : 650V ID : 7A RDS(ON) : 1.4Ω 1 2 1 3 2 1 3 2 2 1 3 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW N 7N65DA SW7N65DA TO-251N TUBE 2 SW J 7N65DA SW7N65DA TO-262N TUBE 3 SW D 7N65DA SW7N65DA TO-252 REEL Absolute maximum ratings Value Symbol Parameter Unit TO-251N VDSS ID Drain to source voltage TO-262N TO-252 650 V Continuous drain current (@TC=25oC) 7* A Continuous drain current (@TC=100oC) 4.4* A 28 A ± 30 V IDM Drain current pulsed VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 323 mJ EAR Repetitive avalanche energy (note 1) 25 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns PD TSTG, TJ TL (note 1) Total power dissipation (@TC=25oC) 176 184 154.3 W Derating factor above 25oC 1.4 1.5 1.2 W/oC Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. -55 ~ + 150 oC 300 oC *. Drain current is limited by junction temperature. Thermal characteristics Value Symbol Parameter Rthjc Thermal resistance, Junction to case Rthja Thermal resistance, Junction to ambient Copyright@ Semipower Technology Co., Ltd. All rights reserved. TO-251N TO-262N TO-252 0.71 0.68 0.81 83 65 Unit oC/W oC/W May. 2022. Rev. 6.0 1/7 SW7N65DA Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current 650 V V/oC 0.58 VDS=650V, VGS=0V 1 uA VDS=520V, TC=125oC 50 uA Gate to source leakage current, forward VGS=30V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V -100 nA 4.5 V 1.7 Ω IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID=3A 1.4 Forward transconductance VDS=30V, ID=3.5A 5.7 Gfs 2.5 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Rising time Turn off delay time 975 VGS=0V, VDS=25V, f=1MHz 92 pF 9.4 16 VDS=325V, ID=7A, RG=25Ω, VGS=10V (note 4,5) 31 ns 50 Fall time 28 Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate resistance 25 VDS=520V, VGS=10V, ID=7A, Ig=5mA (note 4,5) 6.3 VDS=0V, Scan F mode 2.1 nC 11 Ω Source to drain diode ratings characteristics Symbol Parameter IS Continuous source current ISM VSD Test conditions Min. Typ. Max. Unit 7 A Pulsed source current Integral reverse p-n Junction diode in the MOSFET 28 A Diode forward voltage drop. IS=7A, VGS=0V 1.4 V trr Reverse recovery time Qrr Reverse recovery charge IS=7A, VGS=0V, dIF/dt=100A/us 468 ns 3.5 uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =13.2mH, IAS =7A, VDD=50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 7A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ Semipower Technology Co., Ltd. All rights reserved. May. 2022. Rev. 6.0 2/7 SW7N65DA Fig. 1. On-state characteristics Fig. 2. Transfer Characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On-state current vs. diode forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature Copyright@ Semipower Technology Co., Ltd. All rights reserved. May. 2022. Rev. 6.0 3/7 SW7N65DA Fig. 7. Gate charge characteristics Fig. 8. Capacitance Characteristics Fig. 9. Maximum safe operating area(TO-251N) Fig. 10. Maximum safe operating area(TO-262N) Fig. 11. Maximum safe operating area(TO-252) Copyright@ Semipower Technology Co., Ltd. All rights reserved. May. 2022. Rev. 6.0 4/7 SW7N65DA Fig. 12. Transient thermal response curve(TO-251N) Fig. 13. Transient thermal response curve(TO-262N) Fig. 14. Transient thermal response curve(TO-252) Copyright@ Semipower Technology Co., Ltd. All rights reserved. May. 2022. Rev. 6.0 5/7 SW7N65DA Fig. 15. Gate charge test circuit & waveform Fig. 16. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD VIN 10VIN DUT 10% 10% td(on) tr tON td(off) tf tOFF Fig. 17. Unclamped Inductive switching test circuit & waveform Copyright@ Semipower Technology Co., Ltd. All rights reserved. May. 2022. Rev. 6.0 6/7 SW7N65DA Fig. 18. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ Semipower Technology Co., Ltd. All rights reserved. May. 2022. Rev. 6.0 7/7