FH1804D

SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD N-Channel Trench Power MOSFET FH1804D Description Product Summary These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. V DSS 40V RDS( on) max@ VGS=10V 4.9mΩ ID 100A . Features    Applications     Motor Drives UPS DC-DC Converter Improved dv/dt capability Fast switching 100% EAS Guaranteed Green device available TO-252 D D FH1804 G D G ********** S S Schematic diagram TO-252 top view Marking and pin assignment Absolute Maximum Ratings Parameter Drain Source Voltage - Continuous drain current ( TC = 25°C ) Continuous drain current ( TC = 100°C ) 1) TC = 25°C unless otherwise noted Symbol Value Unit V DSS 40 V 100 A 70 A ID Pulsed drain current IDM 400 A Gate Source voltage VGSS ±20 V Avalanche energy 2) E AS 156 mJ Power Dissipation ( T C = 25°C ) PD 100 W TSTG -55 to +150 °C 55 to +150 °C - Storage Temperature Range Operating Junction Temperature Range TJ - Thermal C haracteristics Parameter Thermal Resistance, Junction to Case - www.xfhong.com - Symbol Value Unit RθJC 1.25 °C/W 1/6 VER3.0 N-Channel Trench Power MOSFET FH1804D Electrical Characteristics Parameter T J = 25°C unless otherwise noted Test Condition Symbol Min. Typ. Max. Unit Static characteristics Drain source breakdown voltage BV DSS VGS=0 V, I D= 250uA 40 Gate threshold voltage VGS(th) VDS =VGS, I D =250uA 1.0 VDS =40 V, VGS=0 V, TJ = 25°C --- VDS =32 V, VGS=0 V, TJ = 125°C - Drain-source leakage current I DSS - - - V 2.0 V --- 1 μA --- --- 30 μA - - 100 nA - Gate leakage current, Forward I GSSF VGS=20 V, VDS =0 V Gate leakage current, Reverse I GSSR VGS=- 20 V, V DS=0 V --- --- - 100 nA VGS=10 V, I D =40 A --- 3.8 4.9 mΩ VGS=4.5 V, I D =30 A --- 4.7 6.2 mΩ VDS =5 V , I D=30 A --- 79 --- S Drain source on state resistance - - Forward transconductance R DS(on) gfs Dynamic characteristics Input capacitance Ciss - VDS = 20 V, V GS = 0 V, Coss Output capacitance 4023.6 - --- 410.4 --- --- 338.5 --- pF F = 1MHz Reverse transfer capacitance C rss Turn on delay time t d(on) - - 231.6 - --- 213.6 --- t d(off) --- 219.2 --- Fall time tf --- 74 --- Gate resistance Rg --- 2.4 --- --- 11 --- --- 16.7 --- Rise time tr VDD = 30V,VGS=10V, I D =30 A Turn- off delay time VGS=0V, VDS=0V, F=1MHz ns Ω Gate charge characteristics Gate to source charge Q gs Gate to drain charge VDS =30 V, I D= 30A, Qgd VGS=10V Qg Gate charge total - 66.7 nC - Drain-Source diode characteristics and Maximum Ratings Continuous Source Current Pulsed Source Current 3) IS I SM Diode Forward Voltage VSD Reverse Recovery Time t rr VGS=0V, IS= 40A, TJ=25℃ 100 A 400 A --- 1.2 V --- 41.4 --- ns --- 29 --- nC - - - - --- I S= 20A,di/dt=100A/us, TJ =25℃ Reverse Recovery Charge Qrr Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature. 2: VDD= 20V, VGS=10V, L=0.5mH, I AS=25A, R G=25Ω, Starting TJ =25℃ . 3: Pulse Test：Pulse Width ≤300μs, Duty Cycle≤2％ . www.xfhong.com 2/6 VER3.0 N-Channel Trench Power MOSFET FH1804D Electrical Characteristics Diagrams Figure 1. Typ. Output Characteristics VGS=4V, 4.5V, 5V, 6.5V, 8V,10V Common Source VDS=5 V Pulse test VGS=3V VGS=2.5V Drain current ID (A) Common Source Tc = 25°C Pulse test From Bottom to Top Drain current ID (A) Figure 2. Transfer Characteristics Tc =125°C Tc = 25°C Drain−source voltage VDS (V) Gate−source voltage VGS (V) Figure 3. Capacitance Characteristics Figure 4. Gate Charge Waveform VGS = 10 V Ciss Coss Crss Notes: f = 1 MHz VGS=0 V Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Gate-Source Voltage VGS (V) Capacitance (pF) VDS= 30V Drain-Source Voltage VDS (V) Total Gate Charge QG (nC) Tc = 25°C Figure 6. Rdson-Drain Current ON-Resistance Rdson (mohm) Reverse Drain current IS (A) Figure 5. Body-Diode Characteristics Tc =125°C VGS = 4.5V VGS = 10V Drain Current ID (A) Source-Drain Voltage VSD (V) www.xfhong.com ID = 30A 3/6 VER3.0 N-Channel Trench Power MOSFET FH1804D Figure 7. Rdson-Junction Temperature(℃) Figure 8. Maximum Safe Operating Area 10us DS(on) 100us DC 1ms D VGS = 10V ID = 40A Drain current I (A) Normalized On-Resistance Limited by R 10ms Notes: T = 25°C c T = 150°C j Single Pulse T -Junction Temperation (°C) Drain-Source Voltage V J DS (V) Normalized Transient θJC Z Thermal Resistance Figure 9. Normalized Maximum Transient Thermal Impedance (RthJC) Pulse Width t (s) www.xfhong.com 4/6 VER3.0 N-Channel Trench Power MOSFET FH1804D Test Circuit & Waveform Figure 8. Gate Charge Test Circuit & Waveform Figure 9. Resistive Switching Test Circuit & Waveforms Figure 10. Unclamped Inductive Switching (UIS) Test Circuit & Waveform Figure 11. Diode Recovery Circuit & Waveform www.xfhong.com 5/6 VER3.0 N-Channel Trench Power MOSFET FH1804D Package Information ： TO-252 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 4.830 TYP. D2 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 1.700 0.055 2.900 TYP. L1 L2 1.400 L3 0.114 TYP. 0.067 0.063 TYP. 1.600 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V www.xfhong.com 5.350 TYP. 0.211 TYP. 6/6 VER3.0