AOD536
Rev-1.1
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SuperMOS –TO-252 30V BVDSS 7mΩ RDS(on) 39A ID, N-channel MOSFET
1. Description
The AOD536 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product AOD536 is Pb-free.
2. Features
30V, RDS(ON)=7mΩ(Typ), VGS=10V
RDS(ON)=10.5mΩ(Typ), VGS=4.5V
Material: Halogen free
Reliable and rugged
Use trench MOSFET technology
Avalanche Rated
High density cell design for low RDS(on)
Low leakage current
3. Applications
PWM applications
100% UIS TESTED!
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering Information
Part
Number
Package
Marking
Material
Packing
Quantity
per reel
Flammability
Rating
AOD536
TO-252
ES536/lot
Halogen
free
Tape &
Reel
2,500 PCS
UL 94V-0
Reel
Size
13
inches
5. Pin Configuration and Functions
Pin
Function
1
Gate
3
Source
2
Drain
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Outline
Circuit Diagram
2
D
ESD536
lot
1
G
3
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Rev-1.1
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6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25 ℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
BVDSS
30
V
Gate-Source Voltage
VGS
±20
V
TC=25°C
Continuous Drain Current
TC=75°C
TC=25°C
Maximum Power Dissipation
TC=75°C
39
ID
A
30
31
PD
W
19
Pulsed Drain Current a
IDM
150
A
Avalanche Current, Single Pulsed b
IAS
19
A
Avalanche Energy, Single Pulsed b
EAS
54.2
mJ
Operating Junction Temperature
TJ
150
°C
Lead Temperature
TL
260
°C
Storage Temperature Range
Tstg
-55 to 150
°C
Thermal resistance ratings
Single Operation
Parameter
Junction-to-Ambient Thermal Resistance
Junction-to-Case Thermal Resistance
Symbol
Typ
Max
t ≤ 10 s
RθJA
15
20
Steady State
RθJC
3.3
4
Unit
°C/W
Note:
a: Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
b: EAS condition:Tj=25℃,VDD=30V,VG=10V,L=0.3mH,Rg=25Ω
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Electrical Characteristics
At TA = 25℃ unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
30
V
Zero Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1.0
uA
Gate-to-source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
1.4
1.8
V
VGS=10V, ID=20A
7
12
VGS=4.5V, ID=20A
10.5
18
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Drain-to-source On-resistance
RDS(on)
Forward Trans conductance
gFS
VGS=VDS, ID=250uA
1.0
VDS=5.0V, ID=20A
100
mΩ
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
1150
VGS=0V, f=1MHz,
VDS=15V
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
45
QG(TOT)
15
Total Gate Charge
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
VGS=4.5V, VDS=15V,
ID=20A
400
pF
3
nC
2.5
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
7.6
VGS=10V, VDS=20V,
RL=0.75Ω, RG=6Ω
tf
13.5
ns
18
4.6
BODY DIODE CHARACTERISTICS
Forward Voltage
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VSD
VGS=0V, IS=1.9A
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0.7
1.5
V
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AOD536
Rev-1.1
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7. Typical Characteristic
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8. Dimension (TO-252)
D1
L3
θ2
c
E
L
Φ
D3
h
θ1
D2
e
L2
L4
L1
θ
b
A1
A
D
SYMBOL
MILLIMETER
MIN
Typ.
MAX
A
2.200
2.300
2.400
A1
0.000
b
0.640
C(电镀后)
D
SYMBOL
MILLIMETER
MIN
Typ.
MAX
h
0.000
0.100
0.200
0.127
L
9.900
10.100
10.300
0.690
0.740
L1
0.460
0.520
0.580
L2
6.500
6.600
6.700
L3
2.888 REF
1.400
1.550
1.700
1.600 REF
D1
5.334 REF
L4
0.600
0.800
1.000
D2
4.826 REF
Φ
1.100
1.200
1.300
D3
3.166 REF
θ
0°
E
e
6.000
6.100
6.200
2.286 TYP
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8。
θ1
9°TYP
θ2
9°TYP
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