CMB5972A

CMP5972A/CMB5972A 70V N-Channel MOSFET General Description Product Summary The 5972A uses advanced BVDSS RDSON ID 70V 9mΩ 90A trench technology and design Applications to provide excellent RDS(ON). LED power controller It can be used in a wide variety DC-DC & DC-AC converters High current, high speed switching of applications. Solenoid and relay drivers Motor control, Audio amplifiers Features TO-220 Pin Configuration Fast switching D 100% avalanche tested 175℃ Operating Temperature G D G S TO-220 RoHS Compliant Absolute Maximum Ratings S TO-263 Type Package Marking CMP5972A TO-220 CMP5972A CMB5972A TO-263 CMB5972A Symbol Parameter Rating Units VDS Drain-Source Voltage 70 V VGS Gate-Source Voltage ±25 V ID@TC=25℃ Continuous Drain Current 90 A ID@TC=100℃ Continuous Drain Current 72 A IDM Pulsed Drain Current 270 A EAS Single Pulse Avalanche Energy 360 mJ PD@TC=25℃ Total Power Dissipation 200 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol CA03R3 Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambient --- 62.5 ℃/ W RθJC Thermal Resistance Junction-case --- 1.0 ℃/ W www.cmosfet.com Page 1 of 2 CMP5972A/CMB5972A 70V N-Channel MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS RDS(ON) Drain-Source Breakdown Voltage VGS=0V , ID=250uA 70 --- --- V Static Drain-Source On-Resistance VGS=10V , ID=25A --- --- 9 mΩ RDS(ON) Static Drain-Source On-Resistance VGS=6V , ID=20A --- --- 17 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 --- 4 V IDSS Drain-Source Leakage Current VDS= 60 V , VGS=0V --- --- 1 uA IGSS Gate-Source Leakage Current VGS = ±25V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=10V , ID=10A --- 25 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.8 --- Ω Qg Total Gate Charge I D = 30A --- 95 --- Qgs Gate-Source Charge V DS = 30 V --- 17 --- Qgd Gate-Drain Charge VGS = 10 V --- 25 --- Turn-On Delay Time V DD = 30 V , I D = 2A Td(on) Tr Td(off) Tf Rise Time Turn-Off Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance nC --- 16 --- R L =15Ω R G =2.5Ω VGS =10V --- 12 --- --- 53 --- --- 14 --- --- 3500 --- VDS=25V , VGS=0V , f=1MHz --- 310 --- --- 221 --- Min. Typ. Max. Unit --- --- 90 A --- --- 270 A --- --- 1.2 V ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IS=45A , TJ=25℃ Note : This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability withtout notice. CA03R3 www.cmosfet.com Page 2 of 2