SWD6N70DA

SW6N70DA N-channel Enhanced mode TO-251N/S/U/TO-252/TO-220F /TO-251/TO-251NX/TO-220/TO-251Q /TO-251MQ MOSFET TO251N Features TO220F TO252 TO251U TO251S BVDSS : 700V ID ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 1.7Ω) @VGS=10V ⚫ Low Gate Charge (Typ 26nC) ⚫ Improved dv/dt Capability ⚫ 100% Avalanche Tested ⚫ Application: TV-Power， LED，Charger 1 2 1 3 2 1 3 1 3 TO220 TO251NX TO251 2 2 RDS(ON) : 1.7Ω 1 3 : 6A 2 3 TO251Q 2 TO251MQ 1 3 1 2 1 3 2 1 2 3 3 1 2 1 2 3 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item 1 2 3 4 5 6 7 8 9 10 Sales Type SW N 6N70DA SW SI 6N70DA SW UI 6N70DA SW D 6N70DA SW F 6N70DA SW I 6N70DA SWNX 6N70DA SW P 6N70DA SW QI 6N70DA SW MQI 6N70DA Marking SW6N70DA SW6N70DA SW6N70DA SW6N70DA SW6N70DA SW6N70DA SW6N70DA SW6N70DA SW6N70DA SW6N70DA Package TO-251N TO-251S TO-251U TO-252 TO-220F TO-251 TO-251NX TO-220 TO-251Q TO-251MQ Packaging TUBE TUBE TUBE REEL TUBE TUBE TUBE TUBE TUBE TUBE Absolute maximum ratings Symbol VDSS ID Value TO251S/ TO251/T TO251 TO-251Q/TO- Unit TO252 TO220F TO220 TO251U O251N NX 251MQ 700 V Parameter Drain to source voltage Continuous drain current (@TC=25oC) 6* A Continuous drain current (@TC=100oC) 3.8* A 24 A IDM Drain current pulsed VGS ± 30 V EAS Gate to source voltage Single pulsed avalanche energy (note 2) 216 mJ EAR Repetitive avalanche energy (note 1) 20 mJ dv/dt Peak diode recovery dv/dt 5 V/ns Total power dissipation PD TSTG, TJ TL (note 1) (note 3) (@TC=25oC) Derating factor above 25oC 138.8 130.2 21.9 138.8 147 186.6 138.8 W 1.11 1.04 0.18 1.11 1.18 1.49 1.11 W/oC Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. -55 ~ + 150 oC 300 oC *. Drain current is limited by junction temperature. Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev.11.0 1/9 SW6N70DA Thermal characteristics Value TO251S/ TO251/TO TO251 TO-251Q/TOTO252 TO220F TO220 TO251U 251N NX 251MQ Symbol Parameter Rthjc Thermal resistance, Junction to case 0.9 Rthja Thermal resistance, Junction to ambient 80 0.96 Unit 5.7 0.9 0.85 0.67 0.9 oC/W 46.9 80 100 59.2 80 oC/W Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current IGSS 700 V V/oC 0.42 VDS=700V, VGS=0V 1 uA VDS=560V, TC=125oC 50 uA Gate to source leakage current, forward VGS=30V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V -100 nA 4.5 V 1.9 Ω On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID=3A 1.7 Forward transconductance VDS=30V, ID=3A 5 Gfs 2.5 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Rising time Turn off delay time 1040 VGS=0V, VDS=25V, f=1MHz pF 88 9 21 VDS=350V, ID=6A，RG=25Ω, VGS=10V (note 4,5) 34 ns 65 Fall time 33 Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate resistance 26 VDS=560V, VGS=10V, ID=6A (note 4,5) 5.5 nC 11 VDS=0V, Scan F mode Ω 2.5 Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=6A, VGS=0V trr Reverse recovery time Qrr Reverse recovery charge IS=6A, VGS=0V, dIF/dt=100A/us Min. Typ. Max. Unit 6 A 24 A 1.4 V 455 ns 2.95 uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 12mH, IAS = 6A, VDD =100 V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 6A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev.11.0 2/9 SW6N70DA Fig. 1. On-state characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 2. Transfer Characteristics Fig. 4. On state current vs. diode forward voltage Fig. 6. On resistance variation vs. junction temperature Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev.11.0 3/9 SW6N70DA Fig. 7. Gate charge characteristics Fig. 9. Maximum safe operating area (TO-251S&TO-251U) Fig. 11. Maximum safe operating area(TO-220F) Fig. 8. Capacitance Characteristics Fig.10. Maximum safe operating area(TO-252) Fig. 12. Maximum safe operating area (TO-251&TO-251N) Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev.11.0 4/9 SW6N70DA Fig. 13. Maximum safe operating area(TO-251NX) Fig. 14. Maximum safe operating area(TO-220) Fig. 15. Maximum safe operating area(TO-251Q&TO-251MQ) Fig. 16. Transient thermal response curve(TO-251S&TO-251U) Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev.11.0 5/9 SW6N70DA Fig. 17. Transient thermal response curve(TO-252) Fig. 18. Transient thermal response curve(TO-220F) Fig. 19. Transient thermal response curve(TO-251&TO-251N) Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev.11.0 6/9 SW6N70DA Fig. 20 Transient thermal response curve(TO-251NX) Fig. 21. Transient thermal response curve(TO-220) Fig. 22. Transient thermal response curve(TO-251Q&TO-251MQ) Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev.11.0 7/9 SW6N70DA Fig. 23. Gate charge test circuit & waveform Fig. 24. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD VIN 10VIN DUT 10% 10% td(on) tr tON td(off) tf tOFF Fig. 25. Unclamped Inductive switching test circuit & waveform Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev.11.0 8/9 SW6N70DA Fig. 26. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev.11.0 9/9