VBE1102M

VBE1102M www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 0.20 16 4.4 7.7 Single • Halogen-free According to IEC 61249-2-21 Definition • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling Available Available D TO-252 G S G D N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Currenta SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID Pulsed Drain IDM Linear Derating Factor Linear Derating Factor (PCB Mount) Single Pulse Avalanche Energyb EAS Avalanche Currenta IAR EAR Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 °C PD TA = 25 °C Maximum Power Dissipation (PCB Mount) dV/dt Peak Diode Recovery dV/dtc TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) For 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 3.5 mH, Rg = 25 , IAS = 9.2 A (see fig. 12). c. ISD  9.2 A, dI/dt  110 A/μs, VDD  VDS, TJ  175 °C. LIMIT 100 ± 20 12 7.5 37 0.40 0.025 200 9.2 6.0 60 3.7 5.5 - 55 to + 175 300d UNIT V A W/°C mJ A mJ W V/ns °C 服务热线：400-655-8788 1 VBE1102M www.VBsemi.com THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Maximum Junction-to-Ambient  (PCB Mount)a RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 2.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0, ID = 250 μA 100 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C VGS(th) VDS = VGS, ID = 250 μA 1.5 - 3.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = ± 20 V - - ± 100 VDS = 100 V, VGS = 0 V - - 25 VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 - 0.20 -  2.7 - - S - 360 - ID = 5.5 Ab VGS = 10 V VDS = 50 V, ID = 5.5 Ab μA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b - 150 - - 34 - - - 16 - - 4.4 Gate-Drain Charge Qgd - - 7.7 Turn-On Delay Time td(on) - 8.8 - Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance tr td(off) VDD = 50 V, ID = 9.2 A, Rg = 18 , RD = 5.2 , see fig. 10b tf LD LS Between lead, 6 mm (0.25") from package and center of die contact - 30 - - 19 - - 20 - - 4.5 - - 7.5 - - - 9.2 - - 37 pF nC ns D nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 9.2 A, VGS = 0 S Vb TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb - - 1.8 V - 110 260 ns - 0.53 1.3 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. 服务热线：400-655-8788 2 VBE1102M www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top 25 °C 101 4.5 V 100 ID, Drain Current (A) ID, Drain Current (A) 101 175 °C 100 20 µs Pulse Width TC = 25 °C 10-1 100 101 4 VDS, Drain-to-Source Voltage (V) 91018_01 20 µs Pulse Width VDS = 50 V 91018_03 Fig. 1 - Typical Output Characteristics, TC = 25 °C 4.5 V 100 20 µs Pulse Width TC = 175 °C 10-1 91018_02 100 101 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 175 °C 6 7 8 9 10 Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain Current (A) 101 VGS Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 5 VGS, Gate-to-Source Voltage (V) 91018_04 3.0 2.5 ID = 9.2 A VGS = 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature 服务热线：400-655-8788 3 VBE1102M www.VBsemi.com VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Capacitance (pF) 600 450 Ciss 300 Coss 150 Crss 101 175 °C ISD, Reverse Drain Current (A) 750 25 °C 100 0 100 VDS, Drain-to-Source Voltage (V) 91018_05 VDS = 20 V 8 4 8 12 1.2 102 5 10 µs 2 100 µs 10 5 1 ms 2 10 ms 1 5 For test circuit see figure 13 4 1.1 2 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) VDS = 80 V VDS = 50 V 0 1.0 0.9 Operation in this area limited by RDS(on) 5 0 91018_06 0.8 VSD, Source-to-Drain Voltage (V) 103 16 0.7 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID = 9.2 A 12 0.6 91018_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 20 VGS = 0 V 10-1 0.5 101 16 0.1 0.1 20 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage TC = 25 °C TJ = 175 °C Single Pulse 2 91018_08 2 5 1 2 5 10 2 5 102 2 5 103 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area 服务热线：400-655-8788 4 VBE1102M www.VBsemi.com RD VDS VGS 10 8 ID, Drain Current (A) D.U.T. Rg + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 6 Fig. 10a - Switching Time Test Circuit 4 VDS 2 90 % 0 25 75 50 100 125 150 175 10 % VGS TC, Case Temperature (°C) 91018_09 td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 0 - 0.5 0.2 PDM 0.1 0.05 0.1 10-2 10-5 91018_11 t1 0.02 0.01 Single Pulse (Thermal Response) 10-4 10-3 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 服务热线：400-655-8788 5 VBE1102M www.VBsemi.com L Vary tp to obtain required IAS VDS VDS tp D.U.T. Rg + - I AS VDD V DD VDS 10 V 0.01 Ω tp IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 600 ID 3.8 A 6.5 A Bottom 9.2 A Top 500 400 300 200 100 VDD = 25 V 0 25 91018_12c 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit 服务热线：400-655-8788 6 VBE1102M www.VBsemi.com Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - - Rg • • • • dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel 服务热线：400-655-8788 7 VBE1102M www.VBsemi.com TO-252AA CASE OUTLINE E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 Note • Dimension L3 is for reference only. 服务热线：400-655-8788 8 VBE1102M www.VBsemi.com RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 9 VBE1102M www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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