BUK7215-55A-VB

BUK7215-55A www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.010 at VGS = 10 V 58 0.013 at VGS = 4.5 V 56 VDS (V) 60 • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C Symbol Limit Unit VGS ± 20 V 58 ID 48a 100 IDM Pulsed Drain Current Continuous Source Current (Diode Conduction) IS 50 Avalanche Current IAS 50 EAS 125 Single Avalanche Energy (Duty Cycle  1 %) Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C mJ 136 PD W 3b, 8.3b, c TJ, Tstg Operating Junction and Storage Temperature Range A a - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Symbol t  10 sec Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t  10 s. 服务热线:400-655-8788 1 BUK7215-55A www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Typ.a Max. 2 3 Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 1 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage ± 100 VDS = 60 V, VGS = 0 V, TJ = 175 °C On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb b Forward Transconductance Dynamic RDS(on) gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs VDS =5 V, VGS = 10 V 0.010 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.016 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.020 VGS = 4.5 V, ID = 15 A 0.013 VDS = 15 V, ID = 20 A 60  S 2650 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 470 225 47 VDS = 30 V, VGS = 10 V, ID = 50 A 70 nC 10 12 Turn-On Delay Timec td(on) 10 20 15 25 35 50 20 30 Rise Turn-Off Delay Timec Fall Timec td(off) µA A VGS = 10 V, ID = 20 A Qgd tr nA 250 60 Gate-Drain Chargec Timec V VDD = 30 V, RL = 0.6  ID  50 A, VGEN = 10 V, Rg = 2.5  tf ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C) 60 A Pulsed Current ISM Diode Forward Voltage VSD IF = 20 A, VGS = 0 V 1 1.5 V Reverse Recovery Time trr IF = 20 A, di/dt = 100 A/µs 45 100 ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线:400-655-8788 2 BUK7215-55A www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C unless noted) 100 100 VGS = 10 thru 5 V 80 4V I D - Drain Current (A) I D - Drain Current (A) 80 60 40 60 40 TC = 125 °C 20 20 25 °C 2 V, 3 V - 55 °C 0 0 0 2 4 6 8 0 10 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 120 5 0.015 TC = - 55 °C 0.012 VGS = 4.5 V 25 °C 0.009 125 °C 60 40 20 0 0.006 0.003 0.000 0 10 20 30 I D - Drain Current (A) 40 0 50 20 40 60 80 100 ID - Drain Current (A) On-Resistance vs. Drain Current Transconductance 10 4000 VGS - Gate-to-Source Voltage (V) 3500 3000 C - Capacitance (pF) VGS = 10 V 80 R DS(on) - g fs - Transconductance (S) 100 Ciss 2500 2000 1500 1000 Coss VDS = 30 V ID = 50 A 8 6 4 2 500 Crss 0 0 0 10 40 50 20 30 VDS - Drain-to-Source Voltage (V) Capacitance 60 0 10 20 30 40 50 Qg - Total Gate Charge (nC) Gate Charge 服务热线:400-655-8788 3 BUK7215-55A www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C unless noted) 100 VGS = 10 V ID = 20 A 2.0 I S - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.5 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 175 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 服务热线:400-655-8788 4 BUK7215-55A www.VBsemi.com THERMAL RATINGS 1000 60 Limited by RDS(on)* 100 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 10 µs 100 µs 10 1 ms 10 ms 100 ms DC 1 TC = 25 °C Single Pulse 0.1 10 0 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 175 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Maximum Drain Current vs. Ambient Temperature Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 Normalized Thermal Transient Impedance, Junction-to-Case 服务热线:400-655-8788 5 BUK7215-55A www.VBsemi.com TO-252AA CASE OUTLINE E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 0.265 E 6.35 6.73 0.250 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 Note • Dimension L3 is for reference only. 服务热线:400-655-8788 6 BUK7215-55A www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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