AOD464P

AOD464P 105V N-Channel MOSFET General Description Product Summary The AOD464P uses advanced trench technology and design to provide BVDSS RDSON ID 105V 45mΩ 30A excellent RDS(ON). This device is suitable Applications for use in high voltage synchronous DC-DC Converters rectification , load switching and general Power switching application purpose applications. TO-252 Pin Configuration Features D Low On-Resistance Fast Switching D ● G 100% avalanche tested S ▲ G ● ● TO-252 (AOD464P) RoHS Compliant S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 105 V VGS Gate-Sou ce Voltage ±25 V ID@TC=25℃ Continuous Drain Current 30 A ID@TC=100℃ Continuous Drain Current 20 A IDM Pulsed Drain Current 90 A EAS Single Pulse Avalanche Energy1 324 mJ PD@TC=25℃ Total Power Dissipation 80 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol CA01P1 Max. Unit R θJA Thermal Resistance Junction-ambient (Steady-State) Parameter --- 55 ℃/ W R θJC Thermal Resistance Junction -Case (Steady-State) --- 1.5 ℃/ W www.cmosfet.com Typ. Page 1 of 2 AOD464P 105V N-Channel MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions Min. Typ. Max. Unit V VGS=0V , ID=250uA 105 --- --- VGS=10V , ID=15A --- --- 45 VGS=6V , ID=15A --- --- 50 mΩ RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 --- 4 V IDSS Drain-Source Leakage Current VDS= 84V , VGS=0V , TJ=25℃ --- --- 1 uA IGSS Gate-Source Leakage Current VGS = ±25V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=10V , ID=15A --- 20 --- S VDS=0V , VGS=0V , f=1MHz --- 1.5 --- Ω --- 40 --- --- 8 --- Gate-Drain Charge --- 11 --- Turn-On Delay Time --- 15 --- Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Td(on) Tr Td(off) Tf VDS=50V , VGS=10V, ID=15A Rise Time VDS =50V , VGS=10V , RL =2.7Ω --- 26 --- Turn-Off Delay Time RG =3Ω --- 38 --- Fall Time --- 30 --- Ciss Input Capacitance --- 1700 --- Coss Output Capacitance --- 200 --- Crss Reverse Transfer Capacitance --- 80 --- VDS=25V , VGS=0V , f=1MHz nC ns pF Diode Characteristics Symbol IS VSD Min. Typ. Max. Unit Continuous Source Current Parameter VG=VD=0V , Force Current Conditions --- --- 30 A Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Note : 1.The test condition is VDD=30V,VGS=10V,L=0.5mH,I D=36A This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA01P1 www.cmosfet.com Page 2 of 2