CMD5N50

CMD5N50/CMU5N50 500V N-Channel MOSFET Product Summary General Description The 5N50 have been fabricated using an advanced high voltage MOSFET process BVDSS RDSON ID 500V 1.5Ω 4.5A that is designed to deliver high levels of performance and robustness in popular TO-252 / 251 Pin Configuration AC-DC applications. D Features G G S Fast switching D TO-252 (CMD5N50) 100% avalanche tested S TO-251 (CMU5N50) Improved dv/dt capability Absolute Maximum Ratings Symbol VDSS ID TC = 25℃ unless otherwise noted Paramet er Drain-Source Voltage - Continuous (TC = 25℃ ) Drain Current - Continuous (TC = 100℃ ) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy PD Power Dissipation (TC = 25℃ ) TJ, TSTG Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8�from case for 5 seconds TL - Pulsed (Note 1) (Note 2) CMD5N50/CMU5N50 500 Units V 4.5 A 2.9 15 A ±30 V 202 mJ A 50 W - 55 t o +150 ℃ 300 ℃ CMD5N50/CMU5N50 2.6 Units ℃ /W 62.5 ℃ /W Thermal Characteristics Symbol RθJC P arameter Thermal Resistance, Junction-to-Case Max. RθJA Thermal Resistance, Junction-to-Ambient Max. CA01P1 www.cmosfet.com Page 1 of 2 CMD5N50/CMU5N50 500V N-Channel MOSFET Electrical Characteristic （TC=25℃ unless otherwise noted） Symbol Parameter Test Conditions Min Typ Ma x Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.5 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.2A -- -- 1.5 � Ω gFS Forward Transconductance VDS = 40 V, ID = 1.5A -- 3.5 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 750 -- pF -- 80 -- pF -- 15 -- pF -- 15 -- ns -- 40 -- ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250 V, ID = 4.5 A, RG = 25 Ω � -- 85 -- ns -- 45 -- ns -- 18 30 nC -- 3 -- nC -- 8 -- nC Maximum Continuous Drain-Source Diode Forward Current -- -- 4.5 A Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 1A -- -- 15 A -- -- 1.4 V -- 270 -- ns -- 2 -- µC VDS = 400 V, ID = 4.5 A, VGS = 10 V Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD Drain-Source Diode Forward Voltage trr Reverse Recovery Time Qrr R e v e r se R e c o v e r y C h a r g e VGS = 0 V, IS = 4.5 A, dIF / dt = 100 A/µs Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 5 mH, IAS = 9 A, VDD = 50V, Starting TJ = 25℃ This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA01P1 www.cmosfet.com Page 2 of 2