RC407

P-Channel Enhancement Mode Power MOSFET RC407 Description The RC407 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram ● VDS =-60V,ID =-18A RDS(ON) Typ 60mΩ @ VGS=-10V RDS(ON) Typ 70mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application Marking and pin assignment ● Load switch ● PWM application 100% UIS TESTED! 100% ∆Vds TESTED! TO-252 -2Ltop view Package Marking and Ordering Information Device Marking RC407 Device Device Package RC407 Reel Size TO-252-2L Tape width - Quantity - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -18 A Pulsed Drain Current IDM -64 A Maximum Power Dissipation PD 32 W 0.21 W/℃ EAS 65 mJ TJ,TSTG -55 To 175 ℃ RθJC 4.68 ℃/W Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance, Junction-to-Case(Note 2) Page1 www.realchip.net P-Channel Enhancement Mode Power MOSFET RC407 Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -60 - - V Zero Gate Voltage Drain Current IDSS VDS=-60V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.0 -1.8 -2.0 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-8A - 60 80 mΩ VGS=-4.5V, ID=-6A - 70 90 mΩ VDS=-5V,ID=-8A - 15 - S - 1108 - PF - 73.7 - PF - 58.2 - PF - 8 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=-30V,VGS=0V, F=1.0MHz Crss (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-30V, RL=3.75Ω， - 4 - nS td(off) VGS=-10V,RG=3Ω - 32 - nS - 7 - nS - 23.4 - nC - 4.1 - nC - 4.8 - nC -1.2 V -16 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-30,ID=-8A, VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) Reverse Recovery Time Reverse Recovery Charge VSD VGS=0V,IS=-16A IS trr Qrr TJ = 25°C, IF =- 8A (Note3) di/dt = -100A/μs - - - 25 nS - 31 nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Page2 www.realchip.net P-Channel Enhancement Mode Power MOSFET RC407 Test Circuit 1) EAS Test Circuit 2) Gate Charge Test Circuit 3) Switch Time Test Circuit Page3 www.realchip.net P-Channel Enhancement Mode Power MOSFET RC407 -ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) -Vds Drain-Source Voltage (V) Figure 4 Rdson-Junction Temperature -ID- Drain Current (A) -Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Rdson On-Resistance(mΩ) -Is- Reverse Drain Current (A) -Vgs Gate-Source Voltage (V) - ID- Drain Current (A) -Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Figure 6 Source- Drain Diode Forward Page4 www.realchip.net P-Channel Enhancement Mode Power MOSFET C Capacitance (pF) RC407 TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature -ID- Drain Current (A) -ID- Drain Current (A) -Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 ID Current De-rating r(t),Normalized Effective Transient Thermal Impedance -Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Page5 www.realchip.net P-Channel Enhancement Mode Power MOSFET RC407 TO-252 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 4.830 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 L2 2.900 TYP. 1.400 L3 0.114 TYP. 1.700 0.055 1.600 TYP. 0.067 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 TYP. 0.211 TYP. Page6 www.realchip.net