SWB7N65DW

SW7N65DW N-channel Enhanced mode TO-263 MOSFET Features       BVDSS : 650V TO-263 ID High ruggedness Low RDS(ON) (Typ 0.96Ω)@VGS=10V Low Gate Charge (Typ 34nC) Improved dv/dt Capability 100% Avalanche Tested Application: LED , Charge, PC Power : 7A RDS(ON) : 0.96Ω 2 1 2 1 3 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW B 7N65DW SW7N65DW TO-263 TUBE Value Unit 650 V Continuous drain current (@TC=25oC) 7* A Continuous drain current (@TC=100oC) 4.4* A 28 A ± 30 V Absolute maximum ratings Symbol VDSS Parameter Drain to source voltage ID IDM Drain current pulsed (note 1) VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 151 mJ EAR Repetitive avalanche energy (note 1) 14 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns Total power dissipation (@TC=25oC) 179 W Derating factor above 25oC 1.4 W/oC -55 ~ + 150 oC Value Unit 0.7 oC/W PD TSTG, TJ Operating junction temperature & storage temperature *. Drain current is limited by junction temperature. Thermal characteristics Symbol Rthjc Parameter Thermal resistance, Junction to case Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 2017. Rev. 3.0 1/6 SW7N65DW Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current 650 V V/oC 0.54 VDS=650V, VGS=0V 1 uA VDS=520V, TC=125oC 50 uA Gate to source leakage current, forward VGS=30V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V -100 nA 4.5 V 1.2 Ω IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID=3.5A 0.96 Forward transconductance VDS=30V, ID=3.5A 7.2 Gfs 2.5 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Rising time Turn off delay time 1400 VGS=0V, VDS=25V, f=1MHz 127 pF 21 28 VDS=325V, ID=7A, RG=25Ω, VGS=10V (note 4,5) 58 ns 95 Fall time 52 Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate resistance 34 VDS=520V, VGS=10V, ID=7A (note 4,5) 8 nC 15 VDS=0V, Scan F mode Ω 1.3 Source to drain diode ratings characteristics Symbol Parameter IS Continuous source current ISM VSD Test conditions Min. Typ. Max. Unit 7 A Pulsed source current Integral reverse p-n Junction diode in the MOSFET 28 A Diode forward voltage drop. IS=7A, VGS=0V 1.4 V trr Reverse recovery time Qrr Reverse recovery charge IS=7A, VGS=0V, dIF/dt=100A/us 479 ns 3.8 uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =10mH, IAS =5.5A, VDD=50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 7A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 2017. Rev. 3.0 2/6 SW7N65DW Fig. 1. On-state characteristics Fig. 2. Transfer Characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On-state current vs. diode forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 2017. Rev. 3.0 3/6 SW7N65DW Fig. 7. Gate charge characteristics Fig. 8. Capacitance Characteristics Fig. 9. Maximum safe operating area Fig. 10. Transient thermal response curve Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 2017. Rev. 3.0 4/6 SW7N65DW Fig. 11. Gate charge test circuit & waveform Fig. 12. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD VIN 10VIN DUT 10% 10% td(on) tr tON td(off) tf tOFF Fig. 13. Unclamped Inductive switching test circuit & waveform Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 2017. Rev. 3.0 5/6 SW7N65DW Fig. 14. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTE R. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 2017. Rev. 3.0 6/6