CEU6086
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N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
60
RDS(on) () at VGS = 10 V
0.0050
RDS(on) () at VGS = 4.5 V
0.0120
ID (A)
• Package with Low Thermal Resistance
• 100 % Rg and UIS Tested
97
Configuration
Single
D
TO-252
G
G
D
S
S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current
Continuous Source Current (Diode
TC = 125 °C
Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
97
56
IS
100
IDM
290
IAS
45
EAS
101
PD
UNIT
136
45
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
50
RthJC
1.1
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountc
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
-
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0 V, ID = 250 μA
60
VGS(th)
VDS = VGS, ID = 250 μA
2.0
VDS = 0 V, VGS = ± 20 V
IGSS
4.0
-
-
± 100
VGS = 0 V
VDS = 60 V
-
-
1
-
-
50
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 60 V, TJ = 125 °C
VGS = 0 V
VDS = 60 V, TJ = 175 °C
-
-
150
On-State Drain Currenta
ID(on)
VGS = 10 V
VDS5 V
50
-
-
VGS = 10 V
ID = 25 A
-
0.0050
-
VGS = 10 V
ID = 25 A, TJ = 125 °C
-
0.0117
-
VGS = 10 V
ID = 25 A, TJ = 175 °C
-
0.0149
-
VGS = 4.5 V
ID = 20 A
-
0.0120
-
-
177
-
Drain-Source On-State Resistancea
Forward Transconductanceb
RDS(on)
gfs
VDS = 15 V, ID = 25 A
V
nA
μA
A
S
Dynamicb
-
4844
6060
-
441
555
Crss
-
200
250
Qg
-
82
125
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay
Fall Timec
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 30 V, ID = 50 A
f = 1 MHz
td(on)
tr
Timec
VGS = 0 V
td(off)
VDD = 30 V, RL = 0.6
ID 50 A, VGEN = 10 V, Rg = 1
tf
pF
-
14.5
-
-
13.5
-
nC
1
2
3
-
14
21
-
5
8
-
41
62
-
7
11
-
-
290
A
-
0.9
1.5
V
ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 50 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
120
160
VGS = 10 V thru 5 V
96
ID - Drain Current (A)
ID - Drain Current (A)
128
96
64
VGS = 4 V
72
TC = 25 °C
48
32
24
0
0
TC = 125 °C
TC = - 55 °C
0
2
4
6
8
0
10
2
4
6
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
350
10
0.015
TC = - 55 °C
VGS = 4.5 V
0.0012
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
280
TC = 25 °C
210
TC = 125 °C
140
70
0.009
0.006
VGS = 10 V
0.003
0.000
0
0
10
20
30
40
0
50
20
40
ID - Drain Current (A)
100
ID - Drain Current (A)
8000
10
6400
8
VGS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
80
On-Resistance vs. Drain Current
Transconductance
Ciss
4800
60
3200
Crss
1600
ID = 50 A
VDS = 30 V
6
4
2
Coss
0
0
0
12
24
36
48
60
0
20
40
60
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
80
100
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
80
VGS = 10 V
ID = 25 A
VDS - Drain-to-Source Voltage (V)
RDS(on) - On-Resistance (Normalized)
2.5
2.1
1.7
VGS = 4.5 V
1.3
0.9
ID = 1 mA
76
72
68
64
60
0.5
- 50 - 25
0
25
50
75
100
125
150
- 50 - 25
175
0
TJ - Junction Temperature (°C)
50
75
100
125
150
175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Drain Source Breakdown vs. Junction Temperature
100
0.05
10
0.04
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
25
1
TJ = 25 °C
0.1
0.01
0.001
0.03
0.02
TJ = 150 °C
0.01
TJ = 25 °C
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
VGS(th) Variance (V)
0.1
- 0.3
ID = 5 mA
- 0.7
ID = 250 μA
- 1.1
- 1.5
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Temperature (°C)
Threshold Voltage
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THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
ID - Drain Current (A)
100
100 μs
IDM Limited
1 ms
10
10 ms
1
0.1
0.01
0.01
100 ms
1 s, 10 s, DC
Limited by RDS(on)*
TC = 25 °C
Single Pulse
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
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THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.01
10 -4
0.05
0.02
Single Pulse
10 -3
10 -2
10 -1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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TO-252AA CASE OUTLINE
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
C
0.46
0.61
0.018
0.024
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
5.21
-
0.205
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
0.090 BSC
e1
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.14
1.52
0.045
0.060
ECN: X12-0247-Rev. M, 24-Dec-12
DWG: 5347
Note
• Dimension L3 is for reference only.
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