SM2910T9RL

30V /36A Single N Power MOSFET SM2910T9RL N-Ch 100V Fast Switching MOSFETs     Product Summary Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced high cell density Trench technology BVDSS RDSON ID 100V 18 mΩ 50A TO252 Pin Configuration Description TheSM2910isthehighestperformancetrenchN-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . TheSM2910meettheRoHSandGreenProduct requirement, 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Units VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V TC = 25℃ 50 A TC = 100℃ 30 A 150 A 62.6 mJ 73 W 2.0 ℃/W -55 to +175 ℃ ID IDM EAS PD RθJC TJ, TSTG Continuous Drain Current Pulsed Drain Current note1 Single Pulsed Avalanche Power Dissipation Energy note2 TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range 1 V01 Max. www.sourcechips.com SM2910T9RL 30V /36A Single N Power MOSFET Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 - - V IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS=0V, VGS=±20V - - ±100 nA Gate Threshold Voltage VDS=VGS, ID=250μA 1.0 1.5 2.5 V Static Drain-Source on-Resistance VGS=10V, ID=20A - 18 28 mΩ note2 VGS=4.5V, ID=10A - 22 32 mΩ - 3727 - pF 180 - pF - 148 - pF - 40 - nC On Characteristics VGS(th) RDS(on) Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1.0MHz Coss Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS=30V, ID=15A, VGS=10V - 6.2 - nC - 28 - nC Switching Characteristics td(on) tr td(off) tf - Turn-on Delay Time Turn-on Rise Time VDS=30V, ID=15A, RG=1.8Ω, VGS=10V Turn-off Delay Time - Turn-off Fall Time 22 - 182 ns - ns - 80 - ns - 142 - ns Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 50 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 150 A VSD Drain to Source Diode Forward Voltage - - 1.2 V - 71 - ns - 145 - nC trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, IS=30A IF=30A,dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition : TJ=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω, IAS=14.5A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% 2 V01 www.sourcechips.com 30V /36A Single N Power MOSFET SM2910T9RL Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 40 ID (A) 40 ID (A) 4.5V 30 30 3V 10V 125℃ 20 20 10 10 25℃ 1.5V 0 0 1 V DS(V) 3 2 4 5 0 6 Figure 3:On-resistance vs. Drain Current 30 0 1.0 VGS(V) 3.0 2.0 4.0 5.0 6.0 Figure 4: Body Diode Characteristics IS(A) R DS(ON) (mΩ) 103 28 VGS=4.5V 102 26 T J=125℃ 24 T J=25℃ 101 VGS=10V 22 VGS =0V ID(A) 20 0 10 20 30 100 0.2 40 Figure 5: Gate Charge Characteristics 10 8 0.4 0.6 0.8 VSD(V) 1.0 1.2 1.4 1.6 1.8 Figure 6: Capacitance Characteristics VGS(V) C(pF) VDS=30V ID=15A 104 C iss 6 103 4 C oss 102 Crss 2 0 0 Q g(nC) 5 10 VDS(V) 101 15 20 25 0 3 V01 www.sourcechips.com 5 10 15 20 25 30 30V /36A Single N Power MOSFET SM2910T9RL Figure 8: Normalized on Resistance vs. Junction Temperature Figure 7: Normalized Breakdown Voltage vs. Junction Temperature VBR(DSS) 1.3 R DS(on) 2.5 1.2 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃ ) 0 -100 -50 0 50 100 150 0.5 -100 200 ID(A ) 60 103 Limited by R DS(on) 0 50 100 150 200 ID(A ) 50 1μs 40 10μs 100μs 101 -50 Figure 10: Maximum Continuous Drain Current vs. Case Temperature Figure 9: Maximum Safe Operating Area 102 Tj (℃ ) 30 1ms 20 10ms 100 TC=25℃ Single pulse 10-1 0.1 DC 10 V DS (V) 10 1 0 100 0 25 50 TC (℃ ) 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case Zth J-C(℃ /W) 101 10-1 10 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse -2 10-3 10-6 10-5 10-4 10-3 TP(s) 10-2 PDM 100 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak T J=PDM*ZthJC +TC 10-1 100 101 . 4 V01 www.sourcechips.com 30V /36A Single N Power MOSFET TO-252 Package outline 5 V01 www.sourcechips.com SM2910T9RL