FH3704B

SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD N-Channel Trench Power MOSFET FH3704B Features Description These N Channel enhancement mode power field effect transistors are using trench DMOS  40 V,170A,RDS(on).max=3.5mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed Green device available - technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with  stand high energy pulse in the avalanche and Applications commutation mode. These devices are well suited  Motor Drives for high efficiency fast switching applications.  UPS  DC-DC Converter TO-263 D G S Schematic diagram Marking and pin assignment Absolute Maximum Ratings TO-263 top view TC = 25°C unless otherwise noted Symbol Parameter Value Unit 40 V 170 A 114 A IDM 590 A V GSS ±20 V Avalanche energy EAS 544 mJ Power Dissipation ( TC = 25°C ) PD 186 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ - 55 to +150 °C Value Unit Drain- Source Voltage V DSS 1) Continuous drain current ( TC = 25°C ) Continuous drain current ( TC = 100°C ) Pulsed drain current 1) 2) Gate-Source voltage 3) ID Thermal Characteristics Symbol Parameter Thermal Resistance, Junction-to-Case R θJC 0.88 °C/W Thermal Resistance, Junction to Ambient R θJA 62.5 °C/W - www.xfhong.com - 1/6 Ver1.0 FH3704B N-Channel Trench Power MOSFET Electrical Characteristics Parameter T J = 25°C unless otherwise noted Test Condition Symbol Min. Typ. Max. Unit --- --- V 2.5 V Static characteristics Drain-source breakdown voltage BV DSS VGS =0 V, ID =250uA 40 Gate threshold voltage VGS(th) V DS=V GS, I D =250uA 1.3 V DS= 40 V, VGS=0 V, T J = 25°C --- --- 1 μA Drain source leakage current IDSS V DS= 40 V, VGS=0 V, T J = 125°C --- --- 5 μA 100 nA --- -100 nA 2.5 3.5 mΩ - Gate leakage current , Forward I GSS F VGS =20 V, VDS=0 V Gate leakage current , Reverse I GSS R VGS =-20 V, V DS=0 V VGS =10 V, ID =20 A Drain source on state resistance - - Forward transconductance R DS(on) gfs - --- - - VGS =4.5 V, I D=10 A --- 3.5 6.0 mΩ V DS =5 V , ID =50A 26 --- --- S Dynamic characteristics C iss Input capacitance Coss Output capacitance - V DS = 20 V, VGS = 0 V, - 7810 677 - - pF F = 1MHz Reverse transfer capacitance C rss Turn on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Gate resistance Rg - - - 370 15 - - --- 17 --- --- 52 --- V DD = 20V,VGS=10V, ID =20 A - 23 ns - Ω --- 2.12 --- --- 36.4 --- --- 37.3 --- --- 139 --- IS --- --- 170 A I SM --- --- 590 A 1.2 V VGS =0V, VDS=0V, F=1MHz Gate charge characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total V DS= 20 V, ID =100A, VGS = 10 V Qg nC Drain -Source diode characteristics and Maximum Ratings Continuous Source Current Pulsed Source Current 4) Diode Forward Voltage VSD VGS =0V, IS= 50A, TJ =25℃ Reverse Recovery Time trr I S =100A,di/dt=100A/us, Reverse Recovery Charge Qrr T J =25℃ - - - - 42 120 - - ns nC Notes: 1 : The maximum junction current rating is package limited. 2: Repetitive Rating: Pulse width limited by maximum junction temperature . 3: V DD=20V, V GS=10V, L=1mH, IAS=33A, RG=25Ω, Starting T J =25℃. 4: Pulse Test：Pulse Width ≤300μs, Duty Cycle≤2％ . www.xfhong.com 2/6 Ver1.0 FH3704B N-Channel Trench Power MOSFET Electrical Characteristics Diagrams Figure 1. Typ. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Capacitance Figure 4. Gate Charge Waveform Characteristics Figure 5. Body-Diode Characteristics www.xfhong.com 3/6 Ver1.0 FH3704B N-Channel Trench Power MOSFET Figure 6. Normalized Maximum Transient Thermal Impedance (RthJC) Figure 7. Normalized Maximum Transient Thermal Impedance (RthJA) www.xfhong.com 4/6 Ver1.0 FH3704B N-Channel Trench Power MOSFET Test Circuit & Waveform Figure 8. Gate Charge Test Circuit & Waveform Figure 9. Resistive Switching Test Circuit & Waveforms Figure 10. Unclamped Inductive Switching (UIS) Test Circuit & Waveform Figure 11. Diode Recovery Circuit & Waveform www.xfhong.com 5/6 Ver1.0 FH3704B N-Channel Trench Power MOSFET Package Information : TO-263 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 4.470 4.670 0.176 0.184 A1 0.000 0.150 0.000 0.006 B 1.170 1.370 0.046 0.054 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 e 2.540 TYP. 0.100 TYP. e1 4.980 5.180 0.196 0.204 L 15.050 15.450 0.593 0.608 L1 5.080 5.480 0.200 0.216 L2 2.340 2.740 0.092 0.108 L3 1.300 1.700 0.051 0.067 V www.xfhong.com 5.600 REF 0.220 REF 6/6 Ver1.0