CMD60N68K

CMD60N68K/CMU60N68K 68V N-Channel MOSFET General Description Product Summary The 60N68K uses advanced technology and design to provide excellent R DS(ON) . BVDSS RDSON ID 68V 11mΩ 60A This device is ideal for boost converters Applications and synchronous rectifiers for consumer, telecom, industrial power supplies and LED controller telecom, industrial power supplies and Power Supplies LED backlighting. DC-DC Converters TO-252 /251 Pin Configuration Features D D Low On-Resistance ● 100% Avalanche Tested G S TO-252 RoHS Compliant Absolute Maximum Ratings G D ▲ G S ● ● TO-251 S Type Package Marking CMD60N68K TO-252 CMD60N68K CMU60N68K TO-251 CMU60N68K Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current1 60 A 1 48 A 180 A ID@TC=100℃ IDM Continuous Drain Current Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 312 mJ PD@TC=25℃ Total Power Dissipation 110 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol CA03O1 Max. Unit RθJA Thermal Resistance Junction-ambient Parameter --- 40 ℃/W RθJC Thermal Resistance Junction -Case --- 1.36 ℃/W www.cmosfet.com Typ. Page 1 of 2 CMD60N68K/CMU60N68K 68V N-Channel MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol Min. Typ. Max. Unit BVDSS RDS(ON) Drain-Source Breakdown Voltage Parameter VGS=0V , ID=250μA Conditions 68 --- --- V Static Drain-Source On-Resistance VGS=10V , ID=20A --- --- 11 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250μA 2 --- 4 V VDS=60V , VGS=0V , TJ=25℃ --- --- 1 VDS=60V , VGS=0V , TJ=125℃ --- --- 100 VGS = ±20V , VDS=0V --- --- ±100 nA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current uA gfs Forward Transconductance VDS=5V , ID=20A --- 20 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.0 --- Ω Qg Total Gate Charge --- 36 --- Qgs Gate-Source Charge --- 16 --- Gate-Drain Charge --- 10 --- Turn-On Delay Time --- 21 --- Qgd Td(on) Tr Td(off) Tf VDS=48V , VGS=10V , ID=65A Rise Time VDD=27V , VGS=10V , RGEN =4.7Ω --- 51 --- Turn-Off Delay Time ID=1A --- 37 --- nC ns Fall Time --- 12 --- Ciss Input Capacitance --- 3000 --- Coss Output Capacitance --- 500 --- Crss Reverse Transfer Capacitance --- 25 --- Min. Typ. Max. Unit --- --- 60 A --- --- 180 A --- --- 1.2 V VDS=25V , VGS=0V , f=1MHz pF Diode Characteristics Symbol IS Parameter Conditions Continuous Source Current1 2 ISM Pulsed Source Current VSD Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=20A ,TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%. 3.The EAS data shows Max. rating . The test condition is VDD=20V,VGS=10V,L=1.0mH,IAS=25A. This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA03O1 www.cmosfet.com Page 2 of 2