CMD150P03

CMD150P03/CMU150P03 P-Channel 30-V (D-S) MOSFET General Description Product Summary These P-Channel enhancement mode power BVDSS RDSON ID -30V 6.5mΩ -120A field effect transistors use advanced trench technology and design to provide excellent Applications RDS(ON) . This device is suitable for use as DC-DC Converters a load switch or in PWM applications. LCD Display inverter Power Management in Note book Features TO-252 / 251 Pin Configuration Fast switching speed D D Lower On-resistance G 100% EAS Guaranteed S Simple Drive Requirement TO-252 (CMD150P03) G D S G TO-251 S (CMU150P03) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Sou ce Voltage ±20 V ID@TC=25℃ Continuous Drain Current -120 A IDM Pulsed Drain Current -360 A 506 mJ EAS Single Pulse Avalanche Energy 1 Total Power Dissipation 130 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ PD@TC=25 Thermal Data Symbol CA04L2 Parameter Typ. Max. Unit RθJA Junction-to-Ambient --- 62 ℃/W RθJC Junction-to-Case (Drain) --- 1.1 ℃/W www.cmosfet.com Page 1 of 2 CMD150P03/CMU150P03 P-Channel 30-V (D-S) MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit V VGS=0V , ID=-250uA -30 --- --- VGS=-10V, ID=-28A --- 5 6.5 VGS=-4.5V, ID=-20A --- 6 8 VGS=VDS , ID =-250uA -1 --- -2.5 V --- -1 uA mΩ IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V , TJ=25℃ --- IGSS Gate-Source Leakage Current VGS = ±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5 V , ID=-20A --- 48 --- S VDS=0V , VGS=0V , f=1MHz --- 17 --- Ω --- 130 --- --- 20 --- --- 50 --- Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Tr Td(off) Tf VDS=-24V , ID=-80A VGS=0 to -10V Turn-On Delay Time --- 30 --- Rise Time VDD=-15V, VGS=-10V, RG=6Ω --- 45 --- Turn-Off Delay Time ID=-50A --- 200 --- --- 180 --- Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-25V, VGS=0V , f=1MHz nC ns --- 8200 --- --- 3000 --- --- 1100 --- Min. Typ. Max. Unit pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IF =-20A --- --- -120 A --- --- -360 A --- --- -1.2 V Notes: 1.The EAS data shows Max. rating . The test condition is VDD=-20V , VGS=-10V , L=0.5mH , IAS=-45A This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA04L2 www.cmosfet.com Page 2 of 2