MOT100N02D

MOT100N02C MOT100N02D N-CHANNEL MOSFET Symbol „ PRODUCT CHARACTERISTICS V DSS R DS(ON)Typ( @VGS =2.5V) RDS(ON)Typ(@ VGS =4.5V) ID 2:Drain 20V 4mΩ 2.8mΩ 100A „ APPLICATIONS Power managerment in telecom.,industrial automation,CE Current switching in DC/DC-AC/DC sub-systems Motor driving in power tool E-vehicle,robotics 1:Gate 3:Source  FEATURES * Low gate charge *UIS tested,100% Rg tested *Pb-free lead plating *Halogen-free and RoHS-compliant 1 2 1 3 2 3 TO-251 TO-252 „ ORDER INFORMATION Order codes Halogen-Free N/A N/A Package Halogen MOT100N02D MOT100N02C TO-252 TO-251 Packing 2500 pieces /Reel 70 pieces /Tube  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) Symbol VDSS VGSS ID ID I DM EAS PD TJ,TSTG Parameter Drain-to-source voltage Gate-to-source voltage Continuous drain TC =25 °C TC =100 °C Pulsed drain current Avalanche energy Power dissipation Junction & storage temperature range Ratings 20 ±12 100 70 360 118 88 ~55 to +150 Unit V V A A A mJ W °C  THERMAL PERFORMANCE Parameter Thermal resistance, Junction-to-case Symbol RJC -1- Ratings 1.8 Unit °C/W www.mot-mos.com MOT100N02C MOT100N02D N-CHANNEL MOSFET  ELECTRICAL CHARACTERISTICS(TC = 25°C, unless otherwise specified) Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Conditions V(BR)DSS VGS =0V, I D =250uA Diode continuous current DY NAMIC PARAMETERS Input capacitance Ouput capacitance Reverse transfer capacitance Gate resistance - - V - 1 uA VGS = ± 12V,VDS =0V 5 ±100 uA nA VGS(th) VDS =VGS ,ID=250uA 0.5 V VGS(th) - 2.8 1.1 VGS =4.5V,ID=30A VGS =2.5V ,ID=20A 4.0 mΩ - 4.0 6.0 mΩ VDS =5V ,ID=5A - - 50 S IS =1A, VGS =0V - 0.75 1 V TC =25 °C - - 100 A - 3200 - - 460 - pF pF - 445 - pF - 1.4 - Ω - 48 - nC - 3.6 19 - nC nC - 9.7 - nS - 37 63 - - 52 - nS nS I F =30A, dI F /dt =100A/us - 23 - nS I F =30A, dI F /dt =100A/us - 10 - nC IGSS Diode forward voltage Unit - Gate-body leakage current Forward transconductance Max - IDSS Static drain-source on-resistance 20 Typ - Zero gate voltage drain current Gate threshold voltage Min VDS =20V,VGS =0V TJ =55 °C gFS VSD IS CISS COSS Crss Rg VGS =0V,V DS= 10V, f=1MHz VGS =0V,V DS= 0V, f=1MHz SWITCHING PARAMETERS Total charge Gate source charge Gate drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body-diode reverse recovery time Body-diode reverse recovery charge Qg Qgs Qgd t D(on) VGS =4.5V VDS =10V,ID =30A tr t D(off) tf t rr Qrr VGS =4.5V,VDD =10V ID =30A ,R GEN =1.8 Ω -2- www.mot-mos.com nS MOT100N02C MOT100N02D N-CHANNEL MOSFET „ TY PICAL CHARACTERISTICS Figure1: Output Characteristics Figure 2: Typical Transfer Characteristics Figure 3:On-resistance vs. Drain Current Figure 4: Body Diode Characteristics Figure 5: Gate Charge Characteristics Figure 6: Capacitance Characteristics -3- www.mot-mos.com MOT100N02C MOT100N02D N-CHANNEL MOSFET „ TY PICAL CHARACTERISTICS(Cont.) Figure 7: Normalized Breakdown Voltage vs. Junction Temperature Figure 8: Normalized on Resistance vs. Junction Temperature Figure 9: Maximum safe operating area FFigure10: 10:Maximum Maximumdrain Continuous Curr Figure current Drain vs. case Temperature Figure 11:Maximum Effective Transient Thermal Impedance, Junction-to-Casense curve -4- www.mot-mos.com MOT100N02C MOT100N02D N-CHANNEL MOSFET n TO-252 PACKAGE OUTLINE DIMENSIONS -5- www.mot-mos.com MOT100N02C MOT100N02D N-CHANNEL MOSFET n TO-251 PACKAGE OUTLINE DIMENSIONS -6- www.mot-mos.com