SWD7N60D

SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ TO-220 TO-220F High ruggedness Low RDS(ON) (Typ 1.05Ω)@VGS=10V Low Gate Charge (Typ 30nC) Improved dv/dt Capability 100% Avalanche Tested Application:UPS，Inverter， TV-POWER TO-251 TO-252 BVDSS : 600V ID : 7A RDS(ON) : 1.05Ω 1 2 1 2 3 1 3 2 1 3 2 2 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 2 3 4 SW F 7N60D SW P 7N60D SW I 7N60D SW D 7N60D SW7N60D SW7N60D SW7N60D SW7N60D TO-220F TO-220 TO-251 TO-252 TUBE TUBE TUBE REEL Absolute maximum ratings Symbol VDSS ID Value Parameter TO220F Drain to Source Voltage TO220 TO251 TO252 Unit 600 V Continuous Drain Current (@TC=25oC) 7 A Continuous Drain Current (@TC=100oC) 4.2 A 28 A ± 30 V IDM Drain current pulsed VGS Gate to Source Voltage EAS Single pulsed Avalanche Energy (note 2) 420 mJ EAR Repetitive Avalanche Energy (note 1) 49 mJ dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns PD TSTG, TJ TL (note 1) Total power dissipation (@TC=25oC) Derating Factor above 25oC 23.76 208 125 W 0.19 1.67 1.0 W/oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. -55 ~ + 150 oC 300 oC *. Drain current is limited by junction temperature. Thermal characteristics Value Symbol Parameter Unit TO220F TO220 TO251 TO252 Rthjc Thermal resistance, Junction to case 5.26 0.6 Rthja Thermal resistance, Junction to ambient 49.21 60 Copyright@ Semipower Technology Co., Ltd.All rights reserved. 1.0 80 May.2022. Rev. 7.0 oC/W oC/W 1/7 SW7N60D Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current IGSS 600 V VDS=600V, VGS=0V VDS=480V, V/oC 0.47 TC=125oC 1 uA 50 uA Gate to source leakage current, forward VGS=30V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V -100 nA 4.5 V 1.2 Ω On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID = 3.5A 1.05 Forward Transconductance VGS=30V, ID = 3.5A 6 Gfs 2.5 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance 13 td(on) Turn on delay time 14 tr td(off) tf Qg Rising time Turn off delay time 1300 VGS=0V, VDS=25V, f=1MHz 110 pF 32 VDS=300V, ID=7A, RG=25Ω (note 4，5) ns 67 Fall time 35 Total gate charge Qgs Gate-source charge Qgd Gate-drain charge 30 VDS=480V, VGS=10V, ID=7A (note 4，5) 5 nC 15 Source to drain diode ratings characteristicsa Symbol Parameter IS Continuous source current ISM Test conditions Min. Typ. Max. Unit 7 A Pulsed source current Integral reverse p-n Junction diode in the MOSFET 28 A VSD Diode forward voltage drop. IS=7A, VGS=0V 1.5 V Trr Reverse recovery time Qrr Breakdown voltage charge IS=7A, VGS=0V, dIF/dt=100A/us 315 ns 3.1 uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 17.7mH, IAS = 7A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 10A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ Semipower Technology Co., Ltd.All rights reserved. May.2022. Rev. 7.0 2/7 SW7N60D Fig. 1. On-state characteristics Fig. 3. Gate charge characteristics Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 2. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage Fig. 6. On resistance variation vs. junction temperature Copyright@ Semipower Technology Co., Ltd.All rights reserved. May.2022. Rev. 7.0 3/7 SW7N60D Fig. 7. Maximum safe operating area（TO-220F） Fig. 9. Maximum safe operating area（TO-220） Fig. 9. Maximum safe operating area （TO-251&TO-252） Fig. 10. Capacitance Characteristics Fig. 11. Transient thermal response curve （TO-220F） Copyright@ Semipower Technology Co., Ltd.All rights reserved. May.2022. Rev. 7.0 4/7 SW7N60D Fig. 12. Transient thermal response curve （TO-220） Fig. 13. Transient thermal response curve （TO-251&TO-252） Fig. 14. Gate charge test circuit & waveform VGS Same type as DUT QG 10V VDS QGS QGD DUT VGS 3mA Charge Copyright@ Semipower Technology Co., Ltd.All rights reserved. nC May.2022. Rev. 7.0 5/7 SW7N60D Fig. 15. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD VIN 10VIN DUT 10% 10% td(on) tf td(off) tr tON tOFF Fig. 16. Unclamped Inductive switching test circuit & waveform Fig. 17. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period Copyright@ Semipower Technology Co., Ltd.All rights reserved. VF VDD Body diode forward voltage drop May.2022. Rev. 7.0 6/7 SW7N60D DISCLAIMER * All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ Semipower Technology Co., Ltd.All rights reserved. May.2022. Rev. 7.0 7/7