SLD65R380E7

Pb RoHS SLD65R380E7 650V N-Channel Power MOSFET General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. Features - 11A, 650V, RDS(on)typ= 0.318Ω@VGS = 10 V - Low gate charge ( typical 15.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S D G D-Pak S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted SLD65R380E7 Units Drain-Source Voltage Parameter 650 V Drain Current 11 7 28.8 A A A V mJ A mJ V/ns - Continuous (TC = 25℃) - Continuous (TC = 100℃) (Note 1) Drain Current - Pulsed Gate-Source Voltage (Note 2) Single Pulsed Avalanche Energy (Note 1) Avalanche Current Repetitive Avalanche Energy (Note 3) Peak Diode Recovery dv/dt MOSFET dv/dt Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ±30 246 11 6.25 20 100 87 0.7 -55 to +150 W W/℃ ℃ 300 ℃ * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter SLD65R380E7 Units RθJC Thermal Resistance, Junction-to-Case 1.43 ℃/W RθJS Thermal Resistance, Case-to-Sink Typ. -- ℃/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 ℃/W Maple Semiconductor CO., Ltd http://www.maplesemi.com Rev1.0 Sep. 2020 SLD65R380E7 LEAD FREE Part Number Top Marking Package Packing Method MOQ QTY SLD65R380E7 SLD65R380E7 D-Pak Tape & Reel 5000 25000 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units VGS = 0 V, ID = 1 mA 650 -- -- VGS = 0 V, ID = 1 mA, TJ = 150℃ 650 -- -- VDS = 650 V, VGS = 0 V -- -- 1 uA VDS = 520 V, TC = 125℃ -- 2 -- uA Off Characteristics BVDSS Drain-Source Breakdown Voltage V IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 0.8mA 2.5 -- 4.5 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.0 A -- 318 380 mΩ Gate resistance F=1MHZ -- 1.0 -- Ω VDS = 25 V, VGS = 0 V, f =1MHz -- 920 -- pF -- 20 -- pF Rg Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Co(tr) Time Related Output Capacitance Co(er) Energy Related Output Capacitance VDS = 0V to 400 V, VGS = 0 V 239 pF -- 30 -- pF -------- 8 13 30 8 15.5 3.0 7.9 -------- ns ns ns ns nC nC nC Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400 V, ID = 4.0A, RG = 10 Ω VDS =400 V, ID = 4.0A, VGS = 10 V (Note 4, 5) (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9.6 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 28.8 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.0A -- -- 1.2 V trr Reverse Recovery Time VDD = 400 V, IS = 4.0A, -- 221 -- ns Qrr Reverse Recovery Charge dIF / dt = 100 A/us -- 1.8 -- uC (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 79 mH, IAS = 2.5A, VDD =100V, RG = 25Ω, Starting TJ = 25°C 3. ISD  4A, di/dt  100A/us, VDD  BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width  300us, Duty cycle  2% 5. Essentially independent of operating temperature Maple Semiconductor CO., Ltd http://www.maplesemi.com Rev1.0 Sep. 2020 SLD65R380E7 Package Marking ※ Note: TC = 25℃ 20 V 10 V ※ Note: VDS = 20 V 25℃ 8V 7V 150℃ 6V 5.5 V 5V 4.5 V Figure 1. On-Region Characteristics ※ Note: TC = 25℃ Figure 2. Transfer Characteristics ※ Note: VGS = 0 V 150℃ 25℃ VGS = 20 V VGS = 10 V Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature VDS = 120 V Coss VDS = 400 V Ciss Crss ※ Note: 1. VGS = 0 V 2. f = 250 kHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Note: ID = 4 A Figure 5. Capacitance Characteristics Maple Semiconductor CO., Ltd Figure 6. Gate Charge Characteristics http://www.maplesemi.com Rev1.0 Sep. 2020 SLD65R380E7 Typical Characteristics SLD65R380E7 Typical Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 10 μs 100 μs 1 ms 10 ms Operation in this area is limited by RDS(on) DC ※ Note: 1. TC = 25℃ 2. TJ = 150℃ 3. Single Pulse Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse Figure 11. Eoss vs. Drain to Source Voltage Maple Semiconductor CO., Ltd Figure 12. Transient Thermal Response Curve http://www.maplesemi.com Rev1.0 Sep. 2020 SLD65R380E7 Gate Charge Test Circuit & Waveform Current Regulator 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA R1 R2 Charge Current Sampling (IG) Current Sampling (ID) Resistor Resistor Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10% 10V td(on) tr td(off) t on t off tf Unclamped Inductive Switching Test Circuit & Waveforms LL EAS = VDS Vary tp to obtain required peak ID IAS C DUT BVDSS -------------------BVDSS -- VDD BVDSS ID RG 1 ---- LL IAS2 2 ID (t) VDD VDS (t) VDD 10V tp tp Maple Semiconductor CO., Ltd http://www.maplesemi.com Time Rev1.0 Sep. 2020 + DUT VDS -IS L Driver VGS RG VGS VGS ( Driver ) IS ( DUT ) Same Type as DUT VDD dv/dtcontrolled controlledby by밨 RGG ••dv/dt controlled pulse period ••IISSD controlled byby Duty Factor 밆? Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop Maple Semiconductor CO., Ltd http://www.maplesemi.com Rev1.0 Sep. 2020 SLD65R380E7 Peak Diode Recovery dv/dt Test Circuit & Waveforms SLD65R380E7 TO-252 OUTLINE NOTE： 1The plastic package is not marked as smooth surfaceRa =0.1;Subglossy surfaceRa=0.8 2.Undeclared tolerance±0.25,Unmarked filletRmax=0.25 Maple Semiconductor CO., Ltd http://www.maplesemi.com Rev1.0 Sep. 2020