RC90N06

N-Channel Enhancement Mode Field Effect Transistor RC90N06 Product Summary ● VDS ID RDS(ON)( at VGS=10V) RDS(ON)( at VGS=4.5V) 100% UIS Tested ● 100% ▽VDS Tested 60V ● 90A ● ＜7.5 mohm ● ＜9.5 mohm ● General Description ● Split Gate Trench MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ● Industrial and Motor Drive application ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V 90 Tc=25℃ Drain Current (Silicon limited) ID A Tc=100℃ 50 Pulsed Drain Current A IDM 300 A Avalanche energy B EAS 150 mJ Tc=25℃ 78 Total Power Dissipation C PD W Tc=100℃ 31 Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■Thermal resistance Parameter Symbol Thermal Resistance Junction-to-Ambient D t≤10S Typ Max 15 20 40 50 1.3 1.6 Units RθJA Thermal Resistance Junction-to-Ambient D Steady-State Thermal Resistance Junction-to-Case Steady-State RθJC ℃/W ■ Ordering Information (Example) PREFERED P/N RC90N06 PACKING CODE F1 Marking 90N06 MINIMUM PACKAGE(pcs) 2500 1/5 INNER BOX QUANTITY(pcs) 2500 OUTER CARTON QUANTITY(pcs) 25000 DELIVERY MODE 13“ reel www.realchip.net ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 60 Zero Gate Voltage Drain Current IDSS Typ Max Units Static Parameter Gate-Body Leakage Current TJ=25℃ 1 TJ=55℃ 5 VDS=60V,VGS=0V μA IGSS VGS= ±20V, VDS=0V Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA Static Drain-Source On-Resistance RDS(ON) Diode Forward Voltage Maximum Body-Diode Continuous Current VSD V ±100 nA 1.7 2.5 V VGS= 10V, ID=20A 5.5 7.5 VGS= 4.5V, ID=10A 6.9 9.5 IS=20A,VGS=0V 0.85 1.3 V 80 A 1.2 mΩ IS Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg 2000 VDS=35V,VGS=0V,f=1MHZ 390 pF 13 f=1MHZ, Open drain 1.6 Ω Switching Parameters Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) 34 15.8 VDS=30V,ID=20A Gate-Source Charge Qgs 7.8 Gate-Drain Charge Qgd 5.2 Reverse Recovery Charge Qrr nC 36 IF=20A, di/dt=200A/us Reverse Recovery Time trr 27 Turn-on Delay Time tD(on) 10 Turn-on Rise Time tr Turn-off Delay Time tD(off) Turn-off fall Time A. B. C. D. VGS=10V,VDD=30V,ID=12A RGEN=3Ω tf 36 ns 30 57 Repetitive rating; pulse width limited by max. junction temperature. VDD=50V, RG=25Ω, L=0.5mH, IAS=24.5A,. Pd is based on max. junction temperature, using junction-case thermal resistance. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. 2/5 www.realchip.net N-Channel Enhancement Mode Field Effect Transistor RC90N06 ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. Normalized On-Resistance 3/5 www.realchip.net N-Channel Enhancement Mode Field Effect Transistor RC90N06 Figure7. Drain current Figure8. Safe Operation Area Figure8. Normalized Maximum Transient Thermal Impedance 4/5 www.realchip.net N-Channel Enhancement Mode Field Effect Transistor RC90N06 ■ TO-252 Package information 5/5 www.realchip.net