SWB088R08E8T

SW088R08E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ TO-220 High ruggedness Low RDS(ON) (Typ 9.4mΩ)@VGS=10V Low Gate Charge (Typ 89nC) Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification, Li Battery Protect Board, Inverter TO-263 BVDSS : 80V ID : 80A RDS(ON) : 9.4mΩ 2 1 1 2 General Description 3 2 3 1 1. Gate 2.Drain 3.Source 3 This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW P 088R08E8T SW088R08E8T TO-220 TUBE 2 SW B 088R08E8T SW088R08E8T TO-263 TUBE Absolute maximum ratings Value Symbol Parameter Unit TO-220 VDSS ID TO-263 Drain to source voltage 80 V Continuous drain current (@TC=25oC) 80* A Continuous drain current (@TC=100oC) 56* A 320 A ± 20 V IDM Drain current pulsed VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 210 mJ EAR Repetitive avalanche energy (note 1) 20 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns 138.9 W 1.1 W/oC -55 ~ + 150 oC 300 oC Total power dissipation PD TSTG, TJ TL (note 1) (@TC=25oC) Derating factor above 25oC Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Rthjc Thermal resistance, Junction to case Rthja Thermal resistance, Junction to ambient Copyright@ Semipower Technology Co., Ltd. All rights reserved. Value TO-220 TO-263 0.9 Unit oC/W oC/W 49.3 May.2022. Rev. 3.0 1/6 SW088R08E8T Electrical characteristic ( TJ = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current 80 V V/oC 0.07 VDS=80V, VGS=0V 1 uA VDS=64V, TJ=125oC 50 uA Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V -100 nA 4 V 10.8 mΩ IGSS On characteristics VGS(TH) Gate threshold voltage RDS(ON) Drain to source on state resistance Gfs Forward transconductance VDS=VGS, ID=250uA 2 VGS=10V, ID=40A,TJ=25oC 9.4 VGS=10V, ID=40A,TJ=125oC 16 mΩ VDS=5V, ID=40A 48 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Rising time Turn off delay time 4173 VGS=0V, VDS=40V, f=1MHz 220 pF 200 26 VDS=40V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) 74 ns 69 Fall time 29 Qg Total gate charge 89 Gate-drain charge VDS=64V, VGS=10V, ID=30A , IG=5mA (note 4,5) Qgs Gate-source charge Qgd Rg Gate resistance VDS=0V, Scan F mode 4 24 nC 36 Ω Source to drain diode ratings characteristics Symbol Parameter IS Continuous source current ISM VSD Test conditions Min. Typ. Max. Unit 80 A Pulsed source current Integral reverse p-n Junction diode in the MOSFET 320 A Diode forward voltage drop. IS=30A, VGS=0V 1.4 V trr Reverse recovery time Qrr Reverse recovery charge IS=30A, VGS=0V, dIF/dt=100A/us 41 ns 66 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =0.5mH, IAS =29A, VDD=40V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤30A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 3.0 2/6 SW088R08E8T Fig. 1. On-state characteristics Fig. 2. Transfer Characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On-state current vs. diode forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 3.0 3/6 SW088R08E8T Fig. 7. Gate charge characteristics Fig. 9. Maximum safe operating area (TO-220&TO-263) Fig. 8. Capacitance Characteristics Fig. 10. Maximum drain current vs. case temperature(TO-220&TO-263) Fig. 11. Transient thermal response curve(TO-220&TO-263) Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 3.0 4/6 SW088R08E8T Fig. 12. Gate charge test circuit & waveform Fig. 13. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD VIN 10VIN DUT 10% 10% td(on) tr tON td(off) tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 3.0 5/6 SW088R08E8T Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 3.0 6/6