PZ0703ED-VB

PZ0703ED www.VBsemi.com P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.009 at VGS = - 10 V -60 0.011 at VGS = - 4.5 V -58 VDS (V) - 30 • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT S TO-252 G G D S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 125 °C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy L = 0.1 mH b TC = 25 °C Power Dissipation TA = 25 °C Operating Junction and Storage Temperature Range Symbol Limit Unit VGS ± 20 V ID - 70 a IDM - 58 - 240 IAR - 60 EAR 180 PD 87d 78 A mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mount Free Air Junction-to-Case RthJA RthJC 60 68.5 °C/W 1.0 Notes: a. Package limited. b. Duty cycle  1 %. c. When mounted on 1" square PCB (FR-4 material). d. See SOA curve for voltage derating. * Pb containing terminations are not RoHS compliant, exemptions may apply. 服务热线：400-655-8788 1 PZ0703ED SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 VDS = VGS, ID = - 250 µA -1 Typ. Max. Unit Static Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage IGSS Gate-Body Leakage Zero Gate Voltage Drain Current IDSS ID(on) On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductance a VDS = 0 V, VGS = ± 20 V ± 100 VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 30 V, VGS = 0 V, TJ = 175 °C - 250 VDS = - 5 V, VGS = - 10 V RDS(on) -3 0.009 VGS = - 10 V, ID = - 30 A, TJ = 125 °C 0.012 VGS = - 10 V, ID = - 30 A, TJ = 175 °C 0.013 VGS = - 4.5 V, ID = - 20 A 0.011 VDS = - 15 V, ID = - 75 A nA µA A - 120 VGS = - 10 V, ID = - 30 A gfs V  S 20 Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss Total Gate Chargec Gate-Source Chargec Qg Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) 25 40 tr td(off) 225 360 150 240 210 340 Rise Timec Turn-Off Delay Timec Fall Timec 4000 VGS = 0 V, VDS = - 25 V, f = 1 MHz 1565 pF 715 160 VDS = - 15 V, VGS = - 10 V, ID = - 75 A 240 32 nC 30 VDD = - 15 V, RL = 0.2  ID  - 75 A, VGEN = - 10 V, Rg = 2.5  tf ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C) b Continuous Current Pulsed Current IS ISM Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge - 70 - 240 IF = - 75 A, VGS = 0 V trr IRM(REC) Qrr IF = - 75 A, dI/dt = 100 A/µs A - 1.2 - 1.5 V 55 100 ns 2.5 5 A 0.07 0.25 µC Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 PZ0703ED www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 250 TC = - 55 °C VGS = 10 V thru 6 V 160 I D - Drain Current (A) I D - Drain Current (A) 200 5V 150 100 4V 25 °C 125 °C 120 80 40 50 3V 0 0 0 2 4 6 8 10 1 2 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6 0.036 TC = - 55 °C 0.030 RDS(on) - On-Resistance () 120 25 °C 125 °C 90 60 30 0.024 0.018 VGS = 4.5 V VGS = 10 V 0.012 0.006 0 0 0 20 40 60 80 0 100 20 40 ID - Drain Current (A) 60 80 100 120 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 10 000 VGS - Gate-to-Source Voltage (V) 12 000 C - Capacitance (pF) 3 VDS - Drain-to-Source Voltage (V) 150 g fs - Transconductance (S) 0 Ciss 8000 6000 4000 Coss 2000 Crss 0 0 VDS = 15 V ID = 75 A 16 12 8 4 0 6 12 18 24 VDS - Drain-to-Source Voltage (V) Capacitance 30 0 50 100 150 200 250 300 Qg - Total Gate Charge (nC) Gate Charge 服务热线：400-655-8788 3 PZ0703ED www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.8 100 VGS = 10 V ID = 30 A TJ = 150 °C I S - Source Current (A) RDS(on) - On-Resistance (Normalized) 1.5 1.2 0.9 0.6 10 TJ = 25 °C 0.3 0 - 50 - 25 0 25 50 1 75 100 125 150 175 0 0.2 TJ - Junction Temperature (°C) 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 45 ID = 250 µA IAV (A) at TA = 25 °C 40 VDS (V) I Dav (a) 100 10 IAV (A) at TA = 150 °C 1 30 0.1 0.00001 35 0.0001 0.001 0.01 0.1 tin (s) Avalanche Current vs. Time 1 25 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 服务热线：400-655-8788 4 PZ0703ED www.VBsemi.com THERMAL RATINGS 1000 90 75 100 µs 60 ID - Drain Current (A) I D - Drain Current (A) 100 45 30 10 1 15 0 0 25 50 75 100 125 150 0.1 0.1 175 TC - Case Temperature (°C) * Maximum Avalanche and Drain Current vs. Case Temperature Limited by RDS(on)* 1 ms 10 ms 100 ms DC TC = 25 °C Single Pulse 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified VGS Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 PZ0703ED www.VBsemi.com TO-252AA CASE OUTLINE E A MILLIMETERS C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 0.245 D 5.97 6.22 0.235 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 Note • Dimension L3 is for reference only. 服务热线：400-655-8788 6 PZ0703ED www.VBsemi.com RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 7 PZ0703ED www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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