MS12N100FE

MS12N100FC/FE Features  Low gate charge  Low Crss (typ 13pF)  Fast switchin  100% avalanche tested  Improved dv/dt capability  RoHS product Applications  High frequency switching mode power supply  Electronic ballast based on half bridge  LED power supplies Absolute Ratings (Tc=25℃) Parameter Symbol Value Unit Drain-Source Voltage VDSS 1000 V Drain Current-continuous ID T=25℃ T=100℃ 12 A 8 A Drain Current-pulse (note 1) IDM 64* A Gate-Source Voltage VGS ±30 V Single pulse avalanche energy (note 2) EAS 858 mJ Avalanche Current（note 1） IAR 12 A Repetitive Avalanche Energy(note 1) EAR 27.7 mJ Power Dissipation (MS12N100FC) PD TC=25℃ Derate above 25℃ 272 W 2.17 W/℃ Power Dissipation (MS12N100FE) PD TC=25℃ Derate above 25℃ 100 W 0.8 W/℃ TJ,TSTG -55~+150 ℃ TL 300 ℃ Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes *Drain current limited by maximum junction temperature H1.03 Maspower 1 MS12N100FC/FE Electrical Characteristics(TCASE=25℃ Parameter Drain-Source Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Symbol Tests conditions BVDSS ID=250μA,VGS=0V Min Type Max Units 1000 - - V ∆BVDSS/∆ ID=250μA,referenced TJ to 25℃ - 0.98 - V/℃ VDS=800V,VGS=0V， TC=25℃ - - 1 μA - - 10 μA Zero Gate Voltage Drain Current IDSS Gate body leakage current IGSS VDS=0V,VGS=±30V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 3.0 - 5.0 V Static Drain-Source On-Resistance RDS(ON) VGS=10V,ID=6A， TC=25℃ - 1.18 1.35 Ω Forward Transconductance gFS VDS=40V,ID=6A (note 4) - 9.5 S VDS=720V,TC =125℃ On-Characteristics - Dynamic Characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS=25V, VGS=0V, f=1.0MHZ Electrical Characteristics(TCASE=25℃ Parameter - 2150 2830 pF - 189 246 pF - 13 17 pF unless otherwise specified) Symbol Tests conditions Min Type Max Units Switching-Characteristics Turn-On delay time td(on) Turn-On rise time tr Turn-Off delay time td(Off) Turn-Off rise time tf Total Gate Charge Qg Gate-Source charge Qgs Gate-Drain charge Qgd H1.03 VDD=600V,ID=12A, RGEN=25Ω (note 4,5) VDS=800V,ID=12A, VGS=10V (note 4,5) - 53 121 ns - 116 235 ns - 97 199 ns - 69 171 ns - 43 56 nC - 15 - nC - 21 - nC Maspower 2 MS12N100FC/FE Drain-Source Diode Characteristics and Maximum Ratings Diode Forward Voltage (note 3) VSD VGS=0V,IS=12A - - 1.4 V Maximum Pulsed Drain-Source Diode Forward Current ISM - - - 48 A Maximum Continuous Drain Source Diode Forward Current IS - - - 12 A Reverse recovery time trr - 539 - ns Reverse recovery charge Qrr VGS=0V, IS=8A dIF/dt=100A/μs (note 4) - 6.41 - μC Thermal Characteristic Value Unit MS12N100FC MS12N100FE Parameter Symbol Thermal Resistance,junction to Case Rth(j-C) 0.46 1.25 ℃/W Thermal Resistance, Junction to Ambient Rth(j-A) 40 62.5 ℃/W Order Messag Order codes MS12N100FC MS12N100FE Package TO-247 TO-263 Packaging Tube Tube Notes: 1. Pulse width limited by maximum junction temperature 2. L=20mH, IAS=12A, VDD=50V, RG=25 Ω,Starting TJ=25℃ 3. ISD ≤12A,di/dt ≤300A/µs,VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test：Pulse Width ≤300µs,Duty Cycle≤2％ 5. Essentially independent of operating temperature H1.03 Maspower 3 MS12N100FC/FE ELECTRICAL CHARACTERISTICS (curves) H1.03 Maspower 4 MS12N100FC/FE H1.03 Maspower 5 MS12N100FC/FE PACKAGE MECHANICAL DATA H1.03 Maspower 6