P2504EDG-VB

P2504EDG www.VBsemi.com P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET -40 RDS(on) () at VGS = -10 V 0.012 RDS(on) () at VGS = -4.5 V 0.015 ID (A) • Package with low thermal resistance • 100 % Rg and UIS tested -50 Configuration Single TO-252 S G D G D S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH ID TC = 25 °C -39 -50 IDM -200 IAS -40 EAS 80 PD 136 A mJ 3 TC = 125 °C Operating Junction and Storage Temperature Range V -50 IS TA = 25 °C Maximum Power Dissipation b UNIT W 45 TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 50 RthJC 1.1 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. 服务热线：400-655-8788 1 P2504EDG www.VBsemi.com SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = -250 μA -40 - - VGS(th) VDS = VGS, ID = -250 μA -1.5 - -2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 Zero Gate Voltage Drain Current IDSS Gate-Source Threshold Voltage On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VGS = 0 V VDS = -40 V - - -1 VGS = 0 V VDS = -40 V, TJ = 125 °C - - -50 VGS = 0 V VDS = -40 V, TJ = 175 °C - - -150 VGS = -10 V VDS  -5 V -50 - - VGS = -10 V ID = -17 A - 0.012 - VGS = -10 V ID = -50 A, TJ = 125 °C - 0.017 - VGS = -10 V ID = -50 A, TJ = 175 °C - 0.020 - VGS = -4.5 V ID = -14 A - 0.015 - - 61 - - 2872 3950 - 508 635 - 352 440 VDS = -15 V, ID = -17 A V nA μA A  S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Rg Fall Time c Source-Drain Diode Ratings and VGS = -10 V VDS = -25 V, f = 1 MHz VDS = -30 V, ID = -50 A f = 1 MHz td(on) tr Time c VGS = 0 V td(off) VDD = -20 V, RL = 0.4  ID  -50 A, VGEN = -10 V, Rg = 1  tf pF - 60 80 - 5.7 8.6 - 14.7 22 1.5 3 4.5 - 10 15 - 12 18 - 40 60 - 16 24 - - -200 A - -1 -1.5 V nC  ns Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = -50 A, VGS = 0 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.  2 服务热线：400-655-8788 P2504EDG www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 100 VGS = 10 V thru 5 V 80 ID - Drain Current (A) ID - Drain Current (A) 80 60 4V 40 20 60 40 25 °C 20 3V TC = 125 °C 0 0 3 6 9 12 2 0 15 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.05 5000 0.04 4000 C - Capacitance (pF) RDS(on) - On-Resistance () - 55 °C 0 0.03 VGS = 4.5 V 0.02 Ciss 3000 2000 VGS = 10 V 0.01 10 Coss 1000 Crss 0.00 0 0 20 40 60 80 100 0 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 35 40 150 175 2.0 RDS(on) - On-Resistance (Normalized) ID = 50 A VGS - Gate-to-Source Voltage (V) 5 ID - Drain Current (A) 8 VDS = 20 V 6 4 2 0 0 10 20 30 40 Qg - Total Gate Charge (nC) Gate Charge 50 60 VGS = 10 V ID = 30 A 1.7 1.4 1.1 0.8 0.5 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 服务热线：400-655-8788 3 P2504EDG www.VBsemi.com 100 0.10 10 0.08 RDS(on) - On-Resistance () IS - Source Current (A) TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) TJ = 150 °C TJ = 25 °C 1 0.1 0.01 0.06 0.04 TJ = 150 °C 0.02 TJ = 25 °C 0.001 0.00 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 2 4 6 8 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to Source Voltage 0 1.1 10 120 TC = - 55 °C 100 g fs - Transconductance (S) 0.8 VGS(th) Variance (V) ID = 250 µA 0.5 ID = 5 mA 0.2 - 0.1 - 0.4 - 50 25 °C 125 °C 80 60 40 20 0 - 25 0 25 50 75 100 125 150 0 175 20 TJ - Temperature (°C) 40 60 I D - Drain Current (A) 80 100 Transconductance Threshold Voltage VDS - Drain-to-Source Voltage (V) - 40 - 42 ID = 10 mA - 44 - 46 - 48 - 50 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 服务热线：400-655-8788 4 P2504EDG www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 IDM Limited 100 µs ID - Drain Current (A) Limited by RDS(on)* ID Limited 10 1 ms 10 ms 100 ms 1 s, 10 s, DC 1 0.1 TC = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is s 100 Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 P2504EDG www.VBsemi.com 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.                                 服务热线：400-655-8788 6 P2504EDG www.VBsemi.com TO-252AA Case Outline E C2 L3 H D b2 D1 e1 E1 L gage plane height (0.5 mm) e L5 L4 b C A1 INCHES MILLIMETERS A b3 DIM. MIN. MAX. MIN. A 2.18 2.38 0.086 MAX. 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T13-0592-Rev. A, 02-Sep-13 DWG: 6019 Note • Dimension L3 is for reference only. 服务热线：400-655-8788 7 P2504EDG www.VBsemi.com RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 服务热线：400-655-8788 8 P2504EDG www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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