ESD4186
Rev-1.1
www.elecsuper.com
SuperMOS –TO-252 45V BVDSS 16mΩ RDS(on) 36A ID, N-channel MOSFET
1. Description
The ESD4186 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product ESD4186 is Pb-free.
2. Features
⚫
45V, RDS(ON)=16mΩ(Typ), VGS=10V
⚫
Material: Halogen free
RDS(ON)=21mΩ(Typ), VGS=4.5V
⚫
Reliable and rugged
⚫
Use trench MOSFET technology
⚫
Avalanche Rated
⚫
High density cell design for low RDS(on)
⚫
Low leakage current
3. Applications
⚫
PWM applications
⚫
Load switch
⚫
Power management in portable/desktop PCs
⚫
DC/DC conversion
100% UIS TESTED
4. Ordering Information
Part
Number
Package
Marking
Material
Packing
Quantity
per reel
Flammability
Rating
ESD4186
TO-252
ESD4186/lot
Halogen
free
Tape &
Reel
2,500 PCS
UL 94V-0
Table-1
Reel
Size
13
inches
Ordering information
5. Pin Configuration and Functions
Pin
Function
Outline
1
Gate
2
2
Drain
3
Source
ESD4186
lot
1
3
Table-2
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Circuit Diagram
Pin configuration
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6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25 ℃ ambient temperature unless otherwise specified.
Symbol
Limit
Unit
Drain-Source Voltage
BVDSS
45
V
Gate-Source Voltage
VGS
±20
V
Parameter
Continuous Drain Current
Maximum Power Dissipation
TC=25°C
TC=75°C
TC=25°C
TC=75°C
36
ID
A
28
42
PD
W
25
Pulsed Drain Current a
IDM
144
A
Operating Junction Temperature
TJ
150
°C
Lead Temperature
TL
260
°C
Storage Temperature Range
Tstg
-55 to 150
°C
Thermal resistance ratings
Single Operation
Parameter
Junction-to-Case Thermal Resistance a
t ≤ 10 s
Symbol
Typical
Maximum
Unit
RθJC
2.5
3
°C/W
Note:
a: Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
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Electrical Characteristics
At TA = 25℃ unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
45
V
Zero Gate Voltage Drain Current
IDSS
VDS=45V, VGS=0V
1.0
uA
Gate-to-source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
1.4
1.8
V
VGS=10V, ID=20A
16
21
VGS=4.5V, ID=15A
21
29
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Drain-to-source On-resistance
RDS(on)
Forward Trans conductance
gFS
VGS=VDS, ID=250uA
1.0
VDS=5.0V, ID=20A
80
mΩ
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
980
VGS=0V, f=1MHz, VDS
=20V
130
80
QG(TOT)
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
pF
17
VGS=10V, VDS=20V,
ID=20A
2.5
nC
4.5
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
6.5
17.6
VGS=10V, VDS=20V,
RL=1.5Ω, RGEN=3Ω
ns
19.8
tf
16.6
BODY DIODE CHARACTERISTICS
Forward Voltage
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VSD
VGS=0V, IS=1.0A
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0.45
1.2
V
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7.
Rev-1.1
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Typical Characteristic
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8. Dimension (TO-252)
D1
L3
θ2
c
E
L
Φ
D3
h
θ1
D2
e
L2
L4
L1
θ
b
A1
A
D
MILLIMETER
MILLIMETER
SYMBOL
SYMBOL
MIN
Typ.
MAX
MIN
Typ.
MAX
A
2.200
2.300
2.400
h
0.000
0.100
0.200
A1
0.000
0.127
L
9.900
10.100
10.300
b
0.640
0.690
0.740
L1
C(电镀后)
0.460
0.520
0.580
L2
D
6.500
6.600
6.700
L3
2.888 REF
1.400
1.550
1.700
1.600 REF
D1
5.334 REF
L4
0.600
0.800
1.000
D2
4.826 REF
Φ
1.100
1.200
1.300
D3
3.166 REF
θ
0°
E
e
6.000
6.100
6.200
2.286 TYP
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8。
θ1
9°TYP
θ2
9°TYP
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Rev-1.1
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DISCLAIMER
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WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE
OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with ElecSuper products. You are solely responsible for
(1) selecting the appropriate ElecSuper products for your application;
(2) designing, validating and testing your application;
(3) ensuring your application meets applicable standards, and any other safety, security, or other requirements.
These resources are subject to change without notice. ElecSuper grants you permission to use these resources only for
development of an application that uses the ElecSuper products described in the resource. Other reproduction and display of
these resources are prohibited. No license is granted to any other ElecSuper intellectual property right or to any third party
intellectual property right. ElecSuper disclaims responsibility for, and you will fully indemnify ElecSuper and its representatives
against, any claims, damages, costs, losses, and liabilities arising out of your use of these resources. ElecSuper’s products
are provided subject to ElecSuper’s Terms of Sale or other applicable terms available either on www.elecsuper.com or
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