KCD3406A

KIA 80A，60V N-CHANNEL MOSFET 3406A SEMICONDUCTORS 1. Description KCX3406A is an N-channel enhancement mode power MOS field effect transistor which is produced using KIA's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in Secondary synchronous rectifier, Power Management for Inverter Systems. 2. Features 80A,60V,RDS(ON)(typ.)=8.5mΩ @ VGS=10V SGT MOSFET Low Gate Charge Low Crss Fast switching Improved dv/dt capability 3. Pin configuration Pin Function DFN5*6 TO-252 1,2,3 3 Source 4 1 Gate 5,6,7,8 2 Drain 1/6 Rev 1.1. Sep. 2022 KIA 80A，60V N-CHANNEL MOSFET 3406A SEMICONDUCTORS 4. Ordering Information Part Number Package Brand KCY3406A DFN5*6 KIA KCD3406A TO-252 KIA 5. Absolute maximum ratings TA=25℃ unless otherwise specified Parameter Symbol Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V 80 A 48 A 240 A 63 W 0.5 W/°C EAS 81 mJ TJ -55 to 150 °C TSTG -55 to 150 °C Continuous Drain Current TC=25°C ID TC=100°C Pulsed Drain Current at VGS=10V IDM Power Dissipation (TC=25°C) PD Derating Factor above 25°C Single Pulsed Avalanche Energy 1) Operation Junction Temperature Range Storage Temperature Range 6. Thermal characteristics Parameter Symbol Ratings Unit Thermal Resistance, Junction-to-Case RθJC 2.0 °C/W Thermal Resistance, Junction-to-Ambient RθJA 62 °C/W 2/6 Rev 1.1. Sep. 2022 KIA 80A，60V N-CHANNEL MOSFET 3406A SEMICONDUCTORS 7. Electrical characteristics Parameter (TJ=25°C,unless otherwise notes) Min Typ Max Units Symbol Conditions BVDSS VGS=0V, ID=250uA 60 -- -- V Drain-to-Source Leakage Current IDSS VDS=60V, VGS=0V -- -- 1 uA Gate-to-Source Leakage Current IGSS VGS=±20V, VDS=0V -- -- ±100 nA Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250uA 1.0 2.0 3.0 V Static Drain-to-Source On-Resistance RDS(ON) VGS=10V, ID=13.5A -- 8.5 9.5 mΩ VGS=4.5V, ID=11.5A -- 13 15 mΩ F=1MHz -- 1.8 -- Ω -- 1065 -- pF -- 430 -- pF -- 22 -- pF -- 8 -- nS -- 54 -- nS -- 19 -- nS -- 8.8 -- nS -- 16.8 -- nC -- 5.9 -- nC -- 2.7 -- nC -- -- 80 A -- -- 240 A Drain-to-Source Breakdown Voltage Gate Resistance RG Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time Rise Time Turn-Off Delay Time F=1.0MHz，VGS=0V, VDS=30V td(ON) trise td(OFF) VDD=30V, VGS=10V， RG=3Ω,ID=13.5A 2), 3) Fall Time tfall Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain (Miller) Charge Qgd Continuous Source Current ISD Pulsed Source Current ISM Integral Reverse P-N Junction Diode in the MOSFET Diode Forward Voltage VSD IS=13.5A, VGS=0V -- -- 1.4 V Reverse Recovery Time trr -- 52 -- ns Reverse Recovery Charge Qrr IS=13.5A,VGS=0V, dIF/dt=100A/us 2) -- 0.05 -- nC VDD=48V,VGS=10V, ID=13.5A 2), 3) Notes: 1.L=0.5mH, VDD=50V, RG=10Ω,starting TJ=25°C； 2.Pulse Test：Pulse width≤300us,Duty cycle≤2%； 3.Essentially independent of operating temperature. 3/6 Rev 1.1. Sep. 2022 KIA 80A，60V N-CHANNEL MOSFET 3406A SEMICONDUCTORS 8. Typical Characteristics 4/6 Rev 1.1. Sep. 2022 KIA 80A，60V N-CHANNEL MOSFET 3406A SEMICONDUCTORS 5/6 Rev 1.1. Sep. 2022 KIA 80A，60V N-CHANNEL MOSFET 3406A SEMICONDUCTORS 9. Test Circuits and Waveforms 6/6 Rev 1.1. Sep. 2022