SWD1N60DC

SW1N60DC N-channel Enhanced mode TO-252/SOT223 MOSFET Features ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ TO-252 SOT223 BVDSS : 600V ID High ruggedness Low RDS(ON) (Typ 7Ω)@VGS=10V Low Gate Charge (Typ 7nC) Improved dv/dt Capability 100% Avalanche Tested Application:Charger,Adaptor,LED : 1A RDS(ON) : 7Ω 1 1 2 2 3 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW D 1N60DC SW1N60DC TO-252 REEL 2 SW SA 1N60DC SW1N60DC SOT223 REEL Value TO-252 SOT223 Unit 600 V Continuous drain current (@TC=25oC) 1* A Continuous drain current (@TC=100oC) 0.63* A 4 A ± 30 V Absolute maximum ratings Symbol VDSS ID Parameter Drain to source voltage IDM Drain current pulsed VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 50 mJ EAR Repetitive avalanche energy (note 1) 5 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns PD TSTG, TJ (note 1) Total power dissipation (@TC=25oC) 125 6.7 W Derating factor above 25oC 1.0 0.05 W/oC Operating junction temperature & storage temperature -55 ~ + 150 oC Value TO-252 SO-T223 Unit *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Rthjc Thermal resistance, Junction to case 1.0 18.6 oC/W Rthja Thermal resistance, Junction to ambient 100 74.5 oC/W Copyright@ Semipower Technology Co., Ltd. All rights reserved. May. 2022. Rev.8.0 1/6 SW1N60DC Electrical characteristic ( TJ = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current IGSS 600 V V/oC 0.5 VDS=600V, VGS=0V 1 uA VDS=480V, TJ 50 uA Gate to source leakage current, forward VGS=30V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V -100 nA 4.5 V 8.5 Ω =125oC On characteristics VGS(TH) Gate threshold voltage RDS(ON) Drain to source on state resistance Gfs Forward transconductance VDS=VGS, ID=250uA 2.5 VGS=10V, ID = 0.5A,TJ=25oC 7 VGS=10V, ID = 0.5A,TJ=125oC 14 Ω VDS = 30 V, ID = 0.5A 0.9 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Qg Rising time Turn off delay time 198 VGS=0V, VDS=25V, f=1MHz 29 pF 4 8 VDS=300V, ID=1A, RG=25Ω , VGS=10V (note 4,5) 22 ns 19 Fall time 25 Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate resistance 7 VDS=480V, VGS=10V, ID=1A (note 4,5) 1.6 nC 3.5 VDS=0V, Scan F mode Ω 3.2 Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=1A, VGS=0V trr Reverse recovery time Qrr Reverse recovery charge IS=1A, VGS=0V, dIF/dt=100A/us Min. Typ. Max. Unit 1 A 4 A 1.4 V 244 ns 468 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 100mH, IAS = 1A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 1A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ Semipower Technology Co., Ltd. All rights reserved. May. 2022. Rev.8.0 2/6 SW1N60DC Fig. 1. On-state characteristics Fig. 2. Transfer characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 6. On resistance variation vs. junction temperature Copyright@ Semipower Technology Co., Ltd. All rights reserved. May. 2022. Rev.8.0 3/6 SW1N60DC Fig. 7. Gate charge characteristics Fig. 8. Capacitance Characteristics Fig. 9. Maximum safe operating area(TO-252) Fig. 10. Maximum safe operating area(SOT223) Fig. 11. Transient thermal response curve(TO-252) Copyright@ Semipower Technology Co., Ltd. All rights reserved. May. 2022. Rev.8.0 4/6 SW1N60DC Fig. 12. Transient thermal response curve(SOT223) Fig. 13. Gate charge test circuit & waveform VGS Same type as DUT QG 10V VDS QGD QGS DUT VGS 2.5mA Charge(nC) Fig. 14. Switching time test circuit & waveform VDS 90% RL VDS VDD VIN 10VIN RGS DUT 10% 10% td(on) tr tON Copyright@ Semipower Technology Co., Ltd. All rights reserved. td(off) tf tOFF May. 2022. Rev.8.0 5/6 SW1N60DC Fig. 15. Unclamped Inductive switching test circuit & waveform Fig. 16. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop DISCLAIMER * All the data&curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ Semipower Technology Co., Ltd. All rights reserved. May. 2022. Rev.8.0 6/6