ES15N10G
Rev-1.3
www.elecsuper.com
SuperMOS – TO-252 100V BVDSS, 85mΩ RDS(ON), 12A ID N-channel MOSFET
1. Description
The ES15N10G is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product ES15N10G is Pb-free.
2. Features
100V, RDS(ON)=85mΩ(Tpy), VGS=10V
Material: Halogen free
RDS(ON)=92mΩ(Tpy), VGS=4.5V
Reliable and rugged
Use trench MOSFET technology
Avalanche Rated
High density cell design for low RDS(on)
Low leakage current
3. Applications
PWM applications
100% UIS TESTED!
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering Information
Part
Number
Package
Marking
Material
Packing
Quantity
per reel
Flammability
Rating
ES15N10G
TO-252
ES15N10G
/lot
Halogen
free
Tape &
Reel
2,500 PCS
UL 94V-0
Reel
Size
13
inches
5. Pin Configuration and Functions
Pin
Function
1
Gate
2
Drain
3
Source
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Outline
Circuit Diagram
2
ES15N10G
LOT
1
3
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6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25 ℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
BVDSS
100
V
Gate-Source Voltage
VGS
±20
V
TC=25°C
Continuous Drain Current
TC=70°C
Maximum Power Dissipation
TC=25°C
TC=70°C
12
ID
A
9.5
35
PD
W
22.5
Pulsed Drain Current a
IDM
48
A
Operating Junction Temperature
TJ
150
°C
Lead Temperature
TL
260
°C
Storage Temperature Range
Tstg
-55 to 150
°C
Thermal resistance ratings
Single Operation
Parameter
Junction-to-Ambient Thermal Resistance
Junction-to-Case Thermal Resistance b
Symbol
Typical
Maximum
t ≤ 10 s
RθJA
110
Steady State
RθJC
3.6
Unit
°C/W
Note:
a: Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
b: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
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Electrical Characteristics
At TA = 25℃ unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
100
V
Zero Gate Voltage Drain Current
IDSS
VDS=100V, VGS=0V
1
uA
Gate-to-source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
1.5
2.0
V
VGS=10V, ID=8.0A
85
120
VGS=4.5V, ID=8.0A
92
135
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Drain-to-source On-resistance
RDS(on)
Forward Trans conductance
gFS
VGS=VDS, ID=250uA
1.0
VDS=5.0V, ID=8.0A
mΩ
40
S
2.0
V
BODY DIODE CHARACTERISTICS
Forward Voltage
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VSD
VGS=0V, IS=8.0A
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7. Dimension (TO-252)
D1
L3
θ2
c
E
L
Φ
D3
h
θ1
D2
e
L2
L4
L1
θ
b
A1
A
D
SYMBOL
MILLIMETER
MIN
Typ.
MAX
A
2.200
2.300
2.400
A1
0.000
b
0.640
C(电镀后)
D
SYMBOL
MILLIMETER
MIN
Typ.
MAX
h
0.000
0.100
0.200
0.127
L
9.900
10.100
10.300
0.690
0.740
L1
0.460
0.520
0.580
L2
6.500
6.600
6.700
L3
2.888 REF
1.400
1.550
1.700
1.600 REF
D1
5.334 REF
L4
0.600
0.800
1.000
D2
4.826 REF
Φ
1.100
1.200
1.300
D3
3.166 REF
θ
0°
E
e
6.000
6.100
6.200
2.286 TYP
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8。
θ1
9°TYP
θ2
9°TYP
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ES15N10G
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DISCLAIMER
ELECSUPER PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES
(INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, SAFETY INFORMATION, AND
OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED,
INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR
PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with ElecSuper products. You are solely responsible for
(1) selecting the appropriate ElecSuper products for your application;
(2) designing, validating and testing your application;
(3) ensuring your application meets applicable standards, and any other safety, security, or other requirements.
These resources are subject to change without notice. ElecSuper grants you permission to use these resources only for
development of an application that uses the ElecSuper products described in the resource. Other reproduction and display of
these resources are prohibited. No license is granted to any other ElecSuper intellectual property right or to any third party
intellectual property right. ElecSuper disclaims responsibility for, and you will fully indemnify ElecSuper and its representatives
against, any claims, damages, costs, losses, and liabilities arising out of your use of these resources. ElecSuper’s products are
provided subject to ElecSuper’s Terms of Sale or other applicable terms available either on www.elecsuper.com or provided in
conjunction with such ElecSuper products. ElecSuper’s provision of these resources does not expand or otherwise alter
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